PHP191NQ06LT Datasheet and Replacement
Type Designator: PHP191NQ06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO220AB
PHP191NQ06LT substitution
PHP191NQ06LT Datasheet (PDF)
php191nq06lt phb191nq06lt.pdf

PHP/PHB191NQ06LTN-channel TrenchMOS logic level FETRev. 01 05 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
php191nq06lt.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Datasheet: PHK5NQ15T , PHKD13N03LT , PHKD3NQ10T , PHKD6N02LT , PHN203 , PHN210T , PHP18NQ10T , PHP18NQ11T , K2611 , PHP20N06T , PHP20NQ20T , PHP225 , PHP23NQ11T , PHP27NQ11T , PHP28NQ15T , PHP29N08T , PHP30NQ15T .
History: TPD60R330M | BSH114 | LSGC04R035 | UTT6NP10G-S08-R | SIA537EDJ | AP75N07GW | QM2N7002E3K1
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History: TPD60R330M | BSH114 | LSGC04R035 | UTT6NP10G-S08-R | SIA537EDJ | AP75N07GW | QM2N7002E3K1



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