All MOSFET. APT1001R1BVFR Datasheet

 

APT1001R1BVFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT1001R1BVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 150 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO247

 APT1001R1BVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT1001R1BVFR Datasheet (PDF)

 ..1. Size:70K  apt
 apt1001r1bvfr.pdf

APT1001R1BVFR APT1001R1BVFR

APT1001R1BVFR1000V 11A 1.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 4.1. Size:52K  apt
 apt1001r1bn.pdf

APT1001R1BVFR APT1001R1BVFR

DTO-247GAPT1001R1BN 1000V 10.5A 1.10SAPT1001R3BN 1000V 10.0A 1.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1001RBN 1001R3BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C10.5 10AmpsIDM Pulsed Drain Curren

 5.1. Size:68K  apt
 apt1001r1avr.pdf

APT1001R1BVFR APT1001R1BVFR

APT1001R1AVR1000V 9A 1.100POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 5.2. Size:67K  apt
 apt1001r1hvr.pdf

APT1001R1BVFR APT1001R1BVFR

APT1001R1HVR1000V 9A 1.100POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Low

Datasheet: A498 , ALD1101APA , ALD1101BPA , ALD1101DA , ALD1101MA , APT1001R1AN , APT1001R1AVR , APT1001R1BN , IRF630 , APT1001R1HN , APT1001R1HVR , APT1001R2AN , APT1001R2BN , APT1001R2HN , APT1001R3AN , APT1001R3BN , APT1001R3HN .

 

 
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