PMN23UN Datasheet and Replacement
Type Designator: PMN23UN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TSOP6
PMN23UN substitution
PMN23UN Datasheet (PDF)
pmn230enea.pdf

PMN230ENEA60 V, N-channel Trench MOSFET26 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology
pmn230ene.pdf

PMN230ENE60 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Dischar
Datasheet: PMGD780SN , PMGD8000LN , PMK30EP , PMK35EP , PMK50XP , PML260SN , PML340SN , PMN20EN , IRFB4227 , PMN25EN , PMN25UN , PMN27UN , PMN27UP , PMN28UN , PMN34LN , PMN34UN , PMN34UP .
History: 2SK4037
Keywords - PMN23UN MOSFET datasheet
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History: 2SK4037



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