PMV37EN Specs and Replacement

Type Designator: PMV37EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO236AB

PMV37EN substitution

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PMV37EN datasheet

 ..1. Size:318K  tysemi
 pmv37en.pdf pdf_icon

PMV37EN

Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET te... See More ⇒

 0.1. Size:268K  nxp
 pmv37enea.pdf pdf_icon

PMV37EN

PMV37ENEA 60 V, N-channel Trench MOSFET 21 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El... See More ⇒

 0.2. Size:491K  nxp
 pmv37en2.pdf pdf_icon

PMV37EN

PMV37EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa... See More ⇒

Detailed specifications: PMV20XN, PMV213SN, PMV22EN, PMV28UN, PMV30UN, PMV30XN, PMV31XN, PMV32UP, AON7506, PMV40UN, PMV45EN, PMV48XP, PMV56XN, PMV60EN, PMV65XP, PMZ1000UN, PMZ250UN

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