All MOSFET. PMV37EN Datasheet

 

PMV37EN Datasheet and Replacement


   Type Designator: PMV37EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO236AB
 

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PMV37EN Datasheet (PDF)

 ..1. Size:318K  tysemi
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PMV37EN

Product specificationPMV37EN30 V, 3.1 A N-channel Trench MOSFETRev. 1 9 May 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Trench MOSFET te

 0.1. Size:268K  nxp
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PMV37EN

PMV37ENEA60 V, N-channel Trench MOSFET21 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El

 0.2. Size:491K  nxp
 pmv37en2.pdf pdf_icon

PMV37EN

PMV37EN230 V, N-channel Trench MOSFET3 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa

Datasheet: PMV20XN , PMV213SN , PMV22EN , PMV28UN , PMV30UN , PMV30XN , PMV31XN , PMV32UP , AON7506 , PMV40UN , PMV45EN , PMV48XP , PMV56XN , PMV60EN , PMV65XP , PMZ1000UN , PMZ250UN .

History: MTN22N20J3 | NCE50NF180I | ME13N10A | GSM4804 | ME1303AT3-G

Keywords - PMV37EN MOSFET datasheet

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