All MOSFET. PSMN012-100YS Datasheet

 

PSMN012-100YS Datasheet and Replacement


   Type Designator: PSMN012-100YS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: LFPAK
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PSMN012-100YS Datasheet (PDF)

 ..1. Size:232K  philips
psmn012-100ys.pdf pdf_icon

PSMN012-100YS

PSMN012-100YSN-channel 100V 12m standard level MOSFET in LFPAKRev. 04 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

 ..2. Size:866K  nxp
psmn012-100ys.pdf pdf_icon

PSMN012-100YS

PSMN012-100YSN-channel 100V 12m standard level MOSFET in LFPAKRev. 04 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

 2.1. Size:722K  nxp
psmn012-100yl.pdf pdf_icon

PSMN012-100YS

PSMN012-100YLN-channel 100 V, 12 m logic level MOSFET in LFPAK5620 October 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

 6.1. Size:221K  philips
psmn012-80ps.pdf pdf_icon

PSMN012-100YS

PSMN012-80PSN-channel 80 V 11 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low

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History: VBNC1303 | IRFS4010PBF

Keywords - PSMN012-100YS MOSFET datasheet

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