PSMN015-100P MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN015-100P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 90 nC
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO220AB
PSMN015-100P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN015-100P Datasheet (PDF)
0.1. psmn015-100p 100b.pdf 
Size:101K _philips
PSMN015-100P/100BN-channel TrenchMOS Standard level FETRev. 05 14 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Avalanche ruggedness rated.1.3 Applications DC-to-DC converters Switched-
3.1. psmn015-100 series hg 3.pdf Size:153K _philips
DISCRETE SEMICONDUCTORSDATA SHEETPSMN015-100B; PSMN015-100PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma
5.1. psmn015-110p.pdf Size:91K _philips
PSMN015-110PTrenchMOS Standard level FETRev. 01 08 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Low gate charge.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4
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