APT1001R6BN Datasheet and Replacement

DTO-247GAPT1001R6BN 1000V 8.0A 1.60SAPT1002R4BN 1000V 6.5A 2.40POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1001R6BN 1002R4BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C8 6.5AmpsIDM Pulsed Drain Current 1

Typical Performance CurvesAPT1001R6BFLL_SFLLAPT1001R6BFLLAPT1001R6SFLL1000V 8A 1.60R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines

APT1001R1AVR1000V 9A 1.100POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

APT1001RBLCAPT1001RSLC1000V 11A 1.000WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast sw

APT1001RSVR1000V 11A 1.000POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lowe

APT1001R1BVFR1000V 11A 1.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

APT1001RBVR1000V 11A 1.000POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lowe

APT1001RBVFRAPT1001RSVFR1000V 11A 1.00BVFR POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layou

APT1001R1HVR1000V 9A 1.100POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Low

DTO-247GAPT1001R1BN 1000V 10.5A 1.10SAPT1001R3BN 1000V 10.0A 1.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1001RBN 1001R3BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C10.5 10AmpsIDM Pulsed Drain Curren

APT1001RSVR1000V 11A 1.000POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lowe

APT1001RBLCAPT1001RSLC1000V 11A 1.000WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast sw

APT1001RBVFRAPT1001RSVFR1000V 11A 1.00BVFR POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layou

DTO-247GAPT1001RBN 1000V 11.0A 1.00SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 1001RBN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C11AmpsIDM Pulsed Drain Current 144VGS Gate-Source Vo