All MOSFET. PSMN030-150P Datasheet

 

PSMN030-150P MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN030-150P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 250 W
   Maximum Drain-Source Voltage |Vds|: 150 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 55.5 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 98 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm
   Package: TO220AB

 PSMN030-150P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN030-150P Datasheet (PDF)

 ..1. Size:180K  philips
psmn030-150p.pdf

PSMN030-150P
PSMN030-150P

PSMN030-150PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 ..2. Size:833K  nxp
psmn030-150p.pdf

PSMN030-150P
PSMN030-150P

PSMN030-150PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 6.1. Size:219K  philips
psmn030-60ys.pdf

PSMN030-150P
PSMN030-150P

PSMN030-60YSN-channel LFPAK 60 V 24.7 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench

 6.2. Size:820K  nxp
psmn030-60ys.pdf

PSMN030-150P
PSMN030-150P

PSMN030-60YSN-channel LFPAK 60 V 24.7 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench

 8.1. Size:297K  philips
psmn035 150 series.pdf

PSMN030-150P
PSMN030-150P

PSMN035-150B;PSMN035-150PN-channel enhancement mode field-effect transistorRev. 04 22 February 2001 Product specification1. DescriptionSiliconMAX1 products use the latest TrenchMOS2 technology to achieve thelowest possible on-state resistance for each package.Product availability:PSMN035-150P in SOT78 (TO-220AB)PSMN035-150B in SOT404 (D2-PAK).2. Features Fast swi

 8.2. Size:152K  philips
psmn035-150 series hg 3.pdf

PSMN030-150P
PSMN030-150P

DISCRETE SEMICONDUCTORSDATA SHEETPSMN035-150B; PSMN035-150PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low therma

 8.3. Size:246K  philips
psmn034-100ps.pdf

PSMN030-150P
PSMN030-150P

PSMN034-100PSN-channel 100 V 34.5 m standard level MOSFET in TO220.Rev. 02 1 March 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 8.4. Size:387K  philips
psmn035-100ls.pdf

PSMN030-150P
PSMN030-150P

PSMN035-100LSN-channel QFN3333 100 V 32m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effic

 8.5. Size:236K  philips
psmn039-100ys.pdf

PSMN030-150P
PSMN030-150P

PSMN039-100YSN-channel LFPAK 100 V 39.5 m standard level MOSFETRev. 02 2 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.6. Size:271K  nxp
psmn038 100k.pdf

PSMN030-150P
PSMN030-150P

PSMN038-100KN-channel enhancement mode field-effect transistorRev. 01 16 January 2001 Product specification1. DescriptionSiliconMAX1 products use the latest Philips TrenchMOS2 technology to achievethe lowest possible on-state resistance in a SOT96-1 (SO8) package.Product availability:PSMN038-100K in SOT96-1 (SO8).2. Features Very low on-state resistance Fast switch

 8.7. Size:233K  nxp
psmn034-100bs.pdf

PSMN030-150P
PSMN030-150P

PSMN034-100BSN-channel 100 V 34.5 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 8.8. Size:805K  nxp
psmn034-100ps.pdf

PSMN030-150P
PSMN030-150P

PSMN034-100PSN-channel 100 V 34.5 m standard level MOSFET in TO220.Rev. 02 1 March 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 8.9. Size:801K  nxp
psmn039-100ys.pdf

PSMN030-150P
PSMN030-150P

PSMN039-100YSN-channel LFPAK 100 V 39.5 m standard level MOSFETRev. 02 2 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.10. Size:320K  nxp
psmn038-100yl.pdf

PSMN030-150P
PSMN030-150P

PSMN038-100YLN-channel 100 V 37.5 m logic level MOSFET in LFPAK561 May 2013 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) inLFPAK56 package. This product has been designed and qualified for use in a wide rangeof industrial, communications and domestic equipment.2. Features and benefits High efficiency

 8.11. Size:895K  cn vbsemi
psmn035-150.pdf

PSMN030-150P
PSMN030-150P

PSMN035-150www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

 8.12. Size:289K  inchange semiconductor
psmn034-100ps.pdf

PSMN030-150P
PSMN030-150P

isc N-Channel MOSFET Transistor PSMN034-100PSFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

Datasheet: PSMN020-100YS , PSMN022-30PL , PSMN023-80LS , PSMN025-100D , PSMN026-80YS , PSMN027-100PS , PSMN028-100YS , PSMN030-150B , IRF640 , PSMN030-60YS , PSMN034-100PS , PSMN035-100LS , PSMN035-150B , PSMN035-150P , PSMN038-100K , PSMN039-100YS , PSMN045-80YS .

 

 
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