PSMN035-150B Specs and Replacement
Type Designator: PSMN035-150B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: D2PAK
PSMN035-150B substitution
- MOSFET ⓘ Cross-Reference Search
PSMN035-150B datasheet
psmn035-150 series hg 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low therma... See More ⇒
psmn035-150.pdf
PSMN035-150 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n... See More ⇒
psmn035-100ls.pdf
PSMN035-100LS N-channel QFN3333 100 V 32m standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High effic... See More ⇒
Detailed specifications: PSMN026-80YS, PSMN027-100PS, PSMN028-100YS, PSMN030-150B, PSMN030-150P, PSMN030-60YS, PSMN034-100PS, PSMN035-100LS, IRFZ44, PSMN035-150P, PSMN038-100K, PSMN039-100YS, PSMN045-80YS, PSMN050-80PS, PSMN057-200B, PSMN057-200P, PSMN059-150Y
Keywords - PSMN035-150B MOSFET specs
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