APT1001RBVR MOSFET. Datasheet pdf. Equivalent
Type Designator: APT1001RBVR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO247
APT1001RBVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT1001RBVR Datasheet (PDF)
apt1001rbvr.pdf
APT1001RBVR1000V 11A 1.000POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lowe
apt1001rbvfr.pdf
APT1001RBVFRAPT1001RSVFR1000V 11A 1.00BVFR POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layou
apt1001rblc.pdf
APT1001RBLCAPT1001RSLC1000V 11A 1.000WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast sw
apt1001rbn.pdf
DTO-247GAPT1001RBN 1000V 11.0A 1.00SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 1001RBN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C11AmpsIDM Pulsed Drain Current 144VGS Gate-Source Vo
Datasheet: APT1001R2BN , APT1001R2HN , APT1001R3AN , APT1001R3BN , APT1001R3HN , APT1001R6BN , APT1001RAN , APT1001RBN , IRF4905 , APT1001RSVR , APT10025JVFR , APT10025JVR , APT10025PVR , APT10026JN , APT1002R4AN , APT1002R4BN , APT1002R4CN .
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