All MOSFET. PSMN1R2-30YLC Datasheet

 

PSMN1R2-30YLC MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN1R2-30YLC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 215 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1.95 V
   Maximum Drain Current |Id|: 100 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 78 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.00125 Ohm
   Package: LFPAK

 PSMN1R2-30YLC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN1R2-30YLC Datasheet (PDF)

 ..1. Size:342K  philips
psmn1r2-30ylc.pdf

PSMN1R2-30YLC
PSMN1R2-30YLC

PSMN1R2-30YLCN-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technologyRev. 1 3 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 ..2. Size:926K  nxp
psmn1r2-30ylc.pdf

PSMN1R2-30YLC
PSMN1R2-30YLC

PSMN1R2-30YLCN-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technologyRev. 1 3 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 2.1. Size:286K  nxp
psmn1r2-30yld.pdf

PSMN1R2-30YLC
PSMN1R2-30YLC

PSMN1R2-30YLDN-channel 30 V, 1.2 m logic level MOSFET in LFPAK56using NextPowerS3 Technology30 May 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFETs wit

 6.1. Size:341K  philips
psmn1r2-25ylc.pdf

PSMN1R2-30YLC
PSMN1R2-30YLC

PSMN1R2-25YLCN-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.2. Size:212K  philips
psmn1r2-25yl.pdf

PSMN1R2-30YLC
PSMN1R2-30YLC

PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro

 6.3. Size:729K  nxp
psmn1r2-25yld.pdf

PSMN1R2-30YLC
PSMN1R2-30YLC

PSMN1R2-25YLDN-channel 25 V, 1.2 m, 230 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology19 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated wi

 6.4. Size:719K  nxp
psmn1r2-25yl.pdf

PSMN1R2-30YLC
PSMN1R2-30YLC

PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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