APT1001RSVR Specs and Replacement

Type Designator: APT1001RSVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: D3PAK

APT1001RSVR substitution

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APT1001RSVR datasheet

 ..1. Size:71K  apt
 apt1001rsvr.pdf pdf_icon

APT1001RSVR

APT1001RSVR 1000V 11A 1.000 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lowe... See More ⇒

 0.1. Size:63K  apt
 apt1001rsvrg.pdf pdf_icon

APT1001RSVR

APT1001RSVR 1000V 11A 1.000 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lowe... See More ⇒

 4.1. Size:139K  apt
 apt1001rsvfr.pdf pdf_icon

APT1001RSVR

APT1001RBVFR APT1001RSVFR 1000V 11A 1.00 BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layou... See More ⇒

 5.1. Size:34K  apt
 apt1001rslc.pdf pdf_icon

APT1001RSVR

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw... See More ⇒

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Detailed specifications: APT1001R2HN, APT1001R3AN, APT1001R3BN, APT1001R3HN, APT1001R6BN, APT1001RAN, APT1001RBN, APT1001RBVR, IRF4905, APT10025JVFR, APT10025JVR, APT10025PVR, APT10026JN, APT1002R4AN, APT1002R4BN, APT1002R4CN, APT1002RAN

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