PSMN2R0-30PL Specs and Replacement

Type Designator: PSMN2R0-30PL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 211 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: TO220AB

PSMN2R0-30PL substitution

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PSMN2R0-30PL datasheet

 ..1. Size:212K  philips
psmn2r0-30pl.pdf pdf_icon

PSMN2R0-30PL

PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET Rev. 01 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit... See More ⇒

 ..2. Size:713K  nxp
psmn2r0-30pl.pdf pdf_icon

PSMN2R0-30PL

PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET Rev. 01 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit... See More ⇒

 ..3. Size:261K  inchange semiconductor
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PSMN2R0-30PL

isc N-Channel MOSFET Transistor PSMN2R0-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 2.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 4.1. Size:238K  philips
psmn2r0-30yl.pdf pdf_icon

PSMN2R0-30PL

PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒

Detailed specifications: PSMN1R5-40ES, PSMN1R5-40PS, PSMN1R6-30PL, PSMN1R7-25YLC, PSMN1R7-30YL, PSMN1R7-60BS, PSMN1R8-30PL, PSMN1R9-25YLC, 5N65, PSMN2R0-30YL, PSMN2R0-60ES, PSMN2R0-60PS, PSMN2R2-25YLC, PSMN2R2-30YLC, PSMN2R2-40PS, PSMN2R5-30YL, PSMN2R6-30YLC

Keywords - PSMN2R0-30PL MOSFET specs

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