All MOSFET. PSMN2R0-30PL Datasheet

 

PSMN2R0-30PL MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN2R0-30PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 211 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 117 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.0021 Ohm
   Package: TO220AB

 PSMN2R0-30PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN2R0-30PL Datasheet (PDF)

 ..1. Size:212K  philips
psmn2r0-30pl.pdf

PSMN2R0-30PL PSMN2R0-30PL

PSMN2R0-30PLN-channel 30 V 2.1 m logic level MOSFETRev. 01 24 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit

 ..2. Size:713K  nxp
psmn2r0-30pl.pdf

PSMN2R0-30PL PSMN2R0-30PL

PSMN2R0-30PLN-channel 30 V 2.1 m logic level MOSFETRev. 01 24 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit

 ..3. Size:261K  inchange semiconductor
psmn2r0-30pl.pdf

PSMN2R0-30PL PSMN2R0-30PL

isc N-Channel MOSFET Transistor PSMN2R0-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:238K  philips
psmn2r0-30yl.pdf

PSMN2R0-30PL PSMN2R0-30PL

PSMN2R0-30YLN-channel 30 V 2 m logic level MOSFET in LFPAKRev. 4 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 4.2. Size:221K  nxp
psmn2r0-30yle.pdf

PSMN2R0-30PL PSMN2R0-30PL

PSMN2R0-30YLEN-channel 30 V 2 m logic level MOSFET in LFPAK12 October 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits Enhanced forward biased safe op

 4.3. Size:823K  nxp
psmn2r0-30yl.pdf

PSMN2R0-30PL PSMN2R0-30PL

PSMN2R0-30YLN-channel 30 V 2 m logic level MOSFET in LFPAKRev. 4 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 4.4. Size:230K  nxp
psmn2r0-30yld.pdf

PSMN2R0-30PL PSMN2R0-30PL

PSMN2R0-30YLDN-channel 30 V, 2.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology11 December 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

 4.5. Size:208K  nxp
psmn2r0-30bl.pdf

PSMN2R0-30PL PSMN2R0-30PL

PSMN2R0-30BLN-channel 30 V 2.1 m logic level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 4.6. Size:254K  inchange semiconductor
psmn2r0-30bl.pdf

PSMN2R0-30PL PSMN2R0-30PL

isc N-Channel MOSFET Transistor PSMN2R0-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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