PSMN2R9-25YLC Specs and Replacement
Type Designator: PSMN2R9-25YLC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 92 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00315 Ohm
Package: LFPAK
PSMN2R9-25YLC substitution
- MOSFET ⓘ Cross-Reference Search
PSMN2R9-25YLC datasheet
psmn2r9-25ylc.pdf
PSMN2R9-25YLC N-channel 25 V 3.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒
psmn2r9-25ylc.pdf
PSMN2R9-25YLC N-channel 25 V 3.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒
psmn2r9-30mlc.pdf
PSMN2R9-30MLC N-channel 30 V 2.95 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 2 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and ben... See More ⇒
psmn2r8-40ps.pdf
PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET Rev. 01 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency ... See More ⇒
psmn2r6-40ys.pdf
PSMN2R6-40YS N-channel LFPAK 40 V 2.8 m standard level MOSFET Rev. 01 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS ... See More ⇒
psmn2r7-30pl.pdf
PSMN2R7-30PL N-channel 30 V 2.7 m logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du... See More ⇒
psmn2r2-25ylc.pdf
PSMN2R2-25YLC N-channel 25 V 2.4 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒
psmn2r0-60es.pdf
PSMN2R0-60ES N-channel 60 V 2.2 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien... See More ⇒
psmn2r2-40ps.pdf
PSMN2R2-40PS N-channel 40 V 2.1 m standard level MOSFET Rev. 02 28 September 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due ... See More ⇒
psmn2r0-30yl.pdf
PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒
psmn2r2-30ylc.pdf
PSMN2R2-30YLC N-channel 30 V 2.15m logic level MOSFET in LFPAK using NextPower technology Rev. 02 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒
psmn2r0-60ps.pdf
PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High effici... See More ⇒
psmn2r6-30ylc.pdf
PSMN2R6-30YLC N-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒
psmn2r0-30pl.pdf
PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET Rev. 01 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit... See More ⇒
psmn2r5-30yl.pdf
PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef... See More ⇒
psmn2r8-40ps.pdf
PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduct... See More ⇒
psmn2r6-40ys.pdf
PSMN2R6-40YS N-channel LFPAK 40 V 2.8 m standard level MOSFET Rev. 01 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS ... See More ⇒
psmn2r5-60pl.pdf
PSMN2R5-60PL N-channel 60 V, 2.6 m logic level MOSFET in SOT78 27 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructi... See More ⇒
psmn2r4-30yld.pdf
PSMN2R4-30YLD N-channel 30 V, 2.4 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs... See More ⇒
psmn2r2-40ysd.pdf
PSMN2R2-40YSD N-channel 40 V, 2.2 m , 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 September 2019 Product data sheet 1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performan... See More ⇒
psmn2r4-30mld.pdf
PSMN2R4-30MLD N-channel 30 V, 2.4 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET... See More ⇒
psmn2r7-30pl.pdf
PSMN2R7-30PL N-channel 30 V 2.7 m logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du... See More ⇒
psmn2r2-40bs.pdf
PSMN2R2-40BS N-channel 40 V 2.2 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie... See More ⇒
psmn2r0-25mld.pdf
PSMN2R0-25MLD N-channel 25 V, 2.1 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 8 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFE... See More ⇒
psmn2r2-25ylc.pdf
PSMN2R2-25YLC N-channel 25 V 2.4 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒
psmn2r0-30yle.pdf
PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Enhanced forward biased safe op... See More ⇒
psmn2r1-40pl.pdf
PSMN2R1-40PL N-channel 40 V, 2.2 m logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio... See More ⇒
psmn2r0-60es.pdf
PSMN2R0-60ES N-channel 60 V 2.2 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien... See More ⇒
psmn2r2-40ps.pdf
PSMN2R2-40PS N-channel 40 V 2.1 m standard level MOSFET 22 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction lo... See More ⇒
psmn2r5-40yld.pdf
PSMN2R5-40YLD N-channel 40 V, 2.6 m , 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power ... See More ⇒
psmn2r0-30yl.pdf
PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits... See More ⇒
psmn2r0-60psr.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
psmn2r0-25yld.pdf
PSMN2R0-25YLD N-channel 25 V, 2.09 m , 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated w... See More ⇒
psmn2r2-30ylc.pdf
PSMN2R2-30YLC N-channel 30 V 2.15m logic level MOSFET in LFPAK using NextPower technology Rev. 02 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒
psmn2r8-25mlc.pdf
PSMN2R8-25MLC N-channel 25 V 2.8 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene... See More ⇒
psmn2r0-60ps.pdf
PSMN2R0-60PS N-channel 60 V 2.2 m standard level MOSFET in TO-220 4 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to... See More ⇒
psmn2r6-30ylc.pdf
PSMN2R6-30YLC N-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ... See More ⇒
psmn2r8-80bs.pdf
PSMN2R8-80BS N-channel 80 V, 3 m standard level FET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency d... See More ⇒
psmn2r7-30bl.pdf
PSMN2R7-30BL N-channel 30 V 3.0 m logic level MOSFET in D2PAK Rev. 1 21 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due... See More ⇒
psmn2r0-30yld.pdf
PSMN2R0-30YLD N-channel 30 V, 2.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 11 December 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET... See More ⇒
psmn2r0-30pl.pdf
PSMN2R0-30PL N-channel 30 V 2.1 m logic level MOSFET Rev. 01 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit... See More ⇒
psmn2r0-40yld.pdf
PSMN2R0-40YLD N-channel 40 V, 2.1 m , 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 September 2019 Product data sheet 1. General description 180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance pow... See More ⇒
psmn2r8-40ysd.pdf
PSMN2R8-40YSD N-channel 40 V, 2.8 m , 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 26 August 2019 Product data sheet 1. General description 160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance ... See More ⇒
psmn2r5-30yl.pdf
PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef... See More ⇒
psmn2r8-40bs.pdf
PSMN2R8-40BS N-channel 40 V 2.9 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficie... See More ⇒
psmn2r0-30bl.pdf
PSMN2R0-30BL N-channel 30 V 2.1 m logic level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due... See More ⇒
psmn2r6-60ps.pdf
PSMN2R6-60PS N-channel 60 V, 2.6 m standard level MOSFET in SOT78 5 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust const... See More ⇒
psmn2r8-40ps.pdf
isc N-Channel MOSFET Transistor PSMN2R8-40PS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r5-60pl.pdf
isc N-Channel MOSFET Transistor PSMN2R5-60PL FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r7-30pl.pdf
isc N-Channel MOSFET Transistor PSMN2R7-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 2.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r2-40bs.pdf
isc N-Channel MOSFET Transistor PSMN2R2-40BS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r1-40pl.pdf
isc N-Channel MOSFET Transistor PSMN2R1-40PL FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r0-60es.pdf
isc N-Channel MOSFET Transistor PSMN2R0-60ES FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r2-40ps.pdf
isc N-Channel MOSFET Transistor PSMN2R2-40PS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r0-60ps.pdf
isc N-Channel MOSFET Transistor PSMN2R0-60PS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r8-80bs.pdf
isc N-Channel MOSFET Transistor PSMN2R8-80BS FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r7-30bl.pdf
isc N-Channel MOSFET Transistor PSMN2R7-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r0-30pl.pdf
isc N-Channel MOSFET Transistor PSMN2R0-30PL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 2.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r8-40bs.pdf
isc N-Channel MOSFET Transistor PSMN2R8-40BS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r0-30bl.pdf
isc N-Channel MOSFET Transistor PSMN2R0-30BL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 2.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
psmn2r6-60ps.pdf
isc N-Channel MOSFET Transistor PSMN2R6-60PS FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
Detailed specifications: PSMN2R2-25YLC, PSMN2R2-30YLC, PSMN2R2-40PS, PSMN2R5-30YL, PSMN2R6-30YLC, PSMN2R6-40YS, PSMN2R7-30PL, PSMN2R8-40PS, BS170, PSMN3R0-30YL, PSMN3R0-60ES, PSMN3R0-60PS, PSMN3R2-25YLC, PSMN3R2-30YLC, PSMN3R3-40YS, PSMN3R4-30PL, PSMN3R5-30LL
Keywords - PSMN2R9-25YLC MOSFET specs
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History: HM2809D | STL21N65M5
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