PSMN3R5-30YL
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN3R5-30YL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 74
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 41
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035
Ohm
Package:
LFPAK
PSMN3R5-30YL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN3R5-30YL
Datasheet (PDF)
..1. Size:238K philips
psmn3r5-30yl.pdf 
PSMN3R5-30YLN-channel 30 V 3.5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
..2. Size:329K nxp
psmn3r5-30yl.pdf
PSMN3R5-30YLN-channel 30 V 3.5 m logic level MOSFET in LFPAK3 August 2018 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic packageusing TrenchMOS technology. This product is designed and qualified for use in industrial andcommunications applications.2. Features and benefits High efficiency due to low
4.1. Size:404K philips
psmn3r5-30ll.pdf
PSMN3R5-30LLN-channel QFN3333 30 V 3.6 m logic level MOSFETRev. 3 18 August 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency
6.1. Size:229K philips
psmn3r5-80es.pdf
PSMN3R5-80ESN-channel 80 V, 3.5 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
6.2. Size:235K philips
psmn3r5-80ps.pdf
PSMN3R5-80PSN-channel 80 V, 3.5 m standard level MOSFET in TO-220Rev. 03 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
6.3. Size:818K nxp
psmn3r5-80es.pdf
PSMN3R5-80ESN-channel 80 V, 3.5 m standard level MOSFET in I2PAKRev. 02 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
6.4. Size:283K nxp
psmn3r5-40ysd.pdf
PSMN3R5-40YSDN-channel 40 V, 3.5 m, 120 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology2 October 2018 Product data sheet1. General description120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance
6.5. Size:728K nxp
psmn3r5-25mld.pdf
PSMN3R5-25MLDN-channel 25 V, 3.72 m logic level MOSFET in LFPAK33using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF
6.6. Size:819K nxp
psmn3r5-80ps.pdf
PSMN3R5-80PSN-channel 80 V, 3.5 m standard level MOSFET in TO-220Rev. 03 19 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
6.7. Size:254K inchange semiconductor
psmn3r5-80es.pdf
isc N-Channel MOSFET Transistor PSMN3R5-80ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
6.8. Size:261K inchange semiconductor
psmn3r5-80ps.pdf
isc N-Channel MOSFET Transistor PSMN3R5-80PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Datasheet: PSMN3R0-30YL
, PSMN3R0-60ES
, PSMN3R0-60PS
, PSMN3R2-25YLC
, PSMN3R2-30YLC
, PSMN3R3-40YS
, PSMN3R4-30PL
, PSMN3R5-30LL
, IRFB31N20D
, PSMN3R5-80ES
, PSMN3R5-80PS
, PSMN3R7-25YLC
, PSMN3R7-30YLC
, PSMN3R8-30LL
, PSMN4R0-25YLC
, PSMN4R0-30YL
, PSMN4R0-40YS
.
