PSMN4R3-30PL
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN4R3-30PL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 103
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 41.5
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043
Ohm
Package:
TO220AB
PSMN4R3-30PL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN4R3-30PL
Datasheet (PDF)
..1. Size:215K philips
psmn4r3-30pl.pdf 
PSMN4R3-30PLN-channel 30 V 4.3 m logic level MOSFETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit
..2. Size:716K nxp
psmn4r3-30pl.pdf
PSMN4R3-30PLN-channel 30 V 4.3 m logic level MOSFETRev. 01 16 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low swit
4.1. Size:206K nxp
psmn4r3-30bl.pdf
PSMN4R3-30BLN-channel 30 V 4.1 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
6.1. Size:238K philips
psmn4r3-80ps.pdf
PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
6.2. Size:231K philips
psmn4r3-80es.pdf
PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
6.3. Size:186K nxp
psmn4r3-100es.pdf
PSMN4R3-100ESN-channel 100 V 4.3 m standard level MOSFET in I2PAKRev. 1 31 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High ef
6.4. Size:371K nxp
psmn4r3-80bs.pdf
PSMN4R3-80BSN-channel 80 V, 4.3 m standard level MOSFET in D2PAKRev. 01 27 December 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi
6.5. Size:821K nxp
psmn4r3-80ps.pdf
PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
6.6. Size:820K nxp
psmn4r3-80es.pdf
PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
6.7. Size:193K nxp
psmn4r3-100ps.pdf
PSMN4R3-100PSN-channel 100 V 4.3 m standard level MOSFET in TO-220Rev. 1 27 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High
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