PSMN5R8-40YS MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN5R8-40YS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 28.8 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: LFPAK
PSMN5R8-40YS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN5R8-40YS Datasheet (PDF)
psmn5r8-40ys.pdf
PSMN5R8-40YSN-channel LFPAK 40 V 5.7 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn5r8-40ys.pdf
PSMN5R8-40YSN-channel LFPAK 40 V 5.7 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn5r8-30ll.pdf
PSMN5R8-30LLN-channel QFN3333 30 V 5.8 m logic level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency
psmn5r5-60ys.pdf
PSMN5R5-60YSN-channel LFPAK 60 V, 5.2 m standard level FETRev. 02 24 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn5r0-100es.pdf
PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc
psmn5r6-100ps.pdf
PSMN5R6-100PSN-channel 100 V 5.6 m standard level MOSFET in TO220Rev. 03 2 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff
psmn5r0-30yl.pdf
PSMN5R0-30YLN-channel 30 V 5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
psmn5r0-80ps.pdf
PSMN5R0-80PSN-channel 80 V 4.7 m standard level MOSFETRev. 02 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo
psmn5r0-100ps.pdf
PSMN5R0-100PSN-channel 100 V 5 m standard level MOSFET in TO-220Rev. 2 15 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie
psmn5r6-100bs.pdf
PSMN5R6-100BSN-channel 100 V 5.6 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff
psmn5r5-60ys.pdf
PSMN5R5-60YSN-channel LFPAK 60 V, 5.2 m standard level FETRev. 02 24 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn5r6-60yl.pdf
PSMN5R6-60YLN-channel 60 V, 5.6 m logic level MOSFET in LFPAK563 June 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and
psmn5r0-100es.pdf
PSMN5R0-100ESN-channel 100 V 5 m standard level MOSFET in I2PAKRev. 3 26 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High ef
psmn5r6-100ps.pdf
PSMN5R6-100PSN-channel 100 V 5.6 m standard level MOSFET in TO22030 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.1.2 Features and benefits High efficiency due
psmn5r3-25mld.pdf
PSMN5R3-25MLDN-channel 25 V, 5.3 m logic level MOSFET in LFPAK33using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE
psmn5r4-25yld.pdf
PSMN5R4-25YLDN-channel 25 V, 5.69 m logic level MOSFET in LFPAK56using NextPowerS3 Technology1 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF
psmn5r0-30yl.pdf
PSMN5R0-30YLN-channel 30 V 5 m logic level MOSFET in LFPAKRev. 4 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits
psmn5r0-100xs.pdf
PSMN5R0-100XSN-channel 100V 5 m standard level MOSFET in TO220F (SOT186A)Rev. 1 3 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn5r0-80ps.pdf
PSMN5R0-80PSN-channel 80 V 4.7 m standard level MOSFETRev. 02 23 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo
psmn5r0-80bs.pdf
PSMN5R0-80BSN-channel 80 V, 5.1 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
psmn5r2-60yl.pdf
PSMN5R2-60YLN-channel 60 V, 5.2 m logic level MOSFET in LFPAK563 June 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and
psmn5r6-100bs.pdf
isc N-Channel MOSFET Transistor PSMN5R6-100BSFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SJ264
History: 2SJ264
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