All MOSFET. PSMN7R0-100ES Datasheet

 

PSMN7R0-100ES Datasheet and Replacement


   Type Designator: PSMN7R0-100ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 269 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: I2PAK
 

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PSMN7R0-100ES Datasheet (PDF)

 ..1. Size:241K  philips
 psmn7r0-100es.pdf pdf_icon

PSMN7R0-100ES

PSMN7R0-100ESN-channel 100V 6.8 m standard level MOSFET in I2PAK.Rev. 03 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 3.1. Size:243K  philips
 psmn7r0-100ps.pdf pdf_icon

PSMN7R0-100ES

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220Rev. 02 7 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 3.2. Size:223K  nxp
 psmn7r0-100bs.pdf pdf_icon

PSMN7R0-100ES

PSMN7R0-100BSN-channel 100V 6.8 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 3.3. Size:740K  nxp
 psmn7r0-100ps.pdf pdf_icon

PSMN7R0-100ES

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220.17 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc

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Datasheet: PSMN5R8-30LL , PSMN5R8-40YS , PSMN5R9-30YL , PSMN6R0-25YLB , PSMN6R0-30YL , PSMN6R0-30YLB , PSMN6R5-25YLC , PSMN6R5-80PS , BS170 , PSMN7R0-100PS , PSMN7R0-100XS , PSMN7R0-30YL , PSMN7R0-30YLC , PSMN7R0-40LS , PSMN7R0-60YS , PSMN7R5-25YLC , PSMN7R6-60PS .

History: BLP065N10GL-P | MTP9006E3 | HM8N20I | STD3NM60T4 | RXQ040N03

Keywords - PSMN7R0-100ES MOSFET datasheet

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