APT1002R4BN Datasheet and Replacement

DTO-247GAPT1002RBN 1000V 7.0A 2.00SAPT1002R4BN 1000V 6.5A 2.40POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1002RBN 1002R4BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C7.0 6.5AmpsIDM Pulsed Drain Current 1

DTO-254GAPT1002RCN 1000V 5.5A 2.00STMPOWER MOS IVN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1002RCN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C5.5AmpsIDM Pulsed Drain Current 122VGS Gate-Source Voltage30 VoltsTotal Powe

APT10025JVFR1000V 34A 0.250POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

APT10021JLL1000V 37A 0.210WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

APT10021JFLL1000V 37A 0.210WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

APT10025JVR1000V 34A 0.250POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT10026L2LL1000V 38A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent

APT10025JLC1000V 34A 0.250WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT

APT10025PVR1000V 33A 0.250POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed

APT10026L2FLL1000V 38A 0.260R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally

APT10026JLL1000V 30A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed

DGAPT10026JN 1000V 33A 0.26S"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IV SINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 10026JN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C33AmpsIDM, lLM Pulse

APT10026JFLL1000V 30A 0.140WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi