IRF630M Specs and Replacement
Type Designator: IRF630M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Id| ⓘ - Maximum Drain Current: 9 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220
- MOSFET ⓘ Cross-Reference Search
IRF630M datasheet
..1. Size:343K st
irf630m.pdf 
IRF630M IRF630MFP N-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V ... See More ⇒
0.1. Size:434K st
irf630mfp.pdf
www.DataSheet4U.com IRF630M IRF630MFP N-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V ... See More ⇒
0.2. Size:2999K cn vbsemi
irf630mfp.pdf
IRF630MFP www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.265 f = 60 Hz) RoHS Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 5 Dynamic dV/dt Rating Qgd (nC) 8 Low Thermal Resist... See More ⇒
8.2. Size:859K 1
irf630b irfs630b.pdf
IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switchin... See More ⇒
8.4. Size:335K international rectifier
irf630npbf irf630nspbf irf630nlpbf.pdf
PD - 95047A IRF630NPbF IRF630NSPbF l Advanced Process Technology IRF630NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.30 G l Lead-Free Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rec... See More ⇒
8.5. Size:335K international rectifier
irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf
PD - 95047A IRF630NPbF IRF630NSPbF l Advanced Process Technology IRF630NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.30 G l Lead-Free Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rec... See More ⇒
8.6. Size:981K international rectifier
irf630spbf.pdf
PD - 95118 IRF630SPbF Lead-Free 3/17/04 Document Number 91032 www.vishay.com 1 IRF630SPbF Document Number 91032 www.vishay.com 2 IRF630SPbF Document Number 91032 www.vishay.com 3 IRF630SPbF Document Number 91032 www.vishay.com 4 IRF630SPbF Document Number 91032 www.vishay.com 5 IRF630SPbF Document Number 91032 www.vishay.com 6 IRF630SPbF D2Pak Package Outli... See More ⇒
8.7. Size:155K international rectifier
irf630n.pdf
PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.30 Ease of Paralleling G Simple Drive Requirements Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced proces... See More ⇒
8.8. Size:1372K international rectifier
irf630pbf.pdf
PD- 95916 IRF630PbF Lead-Free 9/27/04 Document Number 91031 www.vishay.com 1 IRF630PbF Document Number 91031 www.vishay.com 2 IRF630PbF Document Number 91031 www.vishay.com 3 IRF630PbF Document Number 91031 www.vishay.com 4 IRF630PbF Document Number 91031 www.vishay.com 5 IRF630PbF Document Number 91031 www.vishay.com 6 IRF630PbF Peak Diode Recovery dv/dt T... See More ⇒
8.9. Size:99K philips
irf630 s 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 9 A g RDS(ON) 400 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology... See More ⇒
8.10. Size:104K st
irf630.pdf
IRF630 IRF630FP N - CHANNEL 200V - 0.35 - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630 200 V ... See More ⇒
8.11. Size:85K st
irf630s.pdf
IRF630S N - CHANNEL 200V - 0.35 - 9A- D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630S 200 V ... See More ⇒
8.12. Size:339K st
irf630 irf630fp.pdf
IRF630 IRF630FP N-channel 200V - 0.35 - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS(on) ID IRF630 200V ... See More ⇒
8.15. Size:129K fairchild semi
irf630 rf1s630sm.pdf
IRF630, RF1S630SM Data Sheet January 2002 9A, 200V, 0.400 Ohm, N-Channel Power Features MOSFETs 9A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.400 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc... See More ⇒
8.16. Size:859K fairchild semi
irf630b.pdf
IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switchin... See More ⇒
8.18. Size:945K samsung
irf630a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.333 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒
8.19. Size:196K vishay
irf630spbf sihf630s.pdf
IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ( )VGS = 10 V 0.40 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleli... See More ⇒
8.20. Size:203K vishay
irf630pbf sihf630.pdf
IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 RoHS* Fast Switching Qg (Max.) (nC) 43 COMPLIANT Ease of Paralleling Qgs (nC) 7.0 Qgd (nC) 23 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D... See More ⇒
8.21. Size:575K vishay
irf630 sihf630.pdf
IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.40 Fast Switching RoHS* Qg (Max.) (nC) 43 COMPLIANT Ease of Paralleling Qgs (nC) 7.0 Qgd (nC) 23 Simple Drive Requirements Configuration Single Lead (Pb)-free Available D DESCRIPTION TO-... See More ⇒
8.22. Size:170K vishay
irf630s sihf630s.pdf
IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ( )VGS = 10 V 0.40 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleli... See More ⇒
8.24. Size:75K hsmc
hirf630.pdf
Spec. No. MOS200401 HI-SINCERITY Issued Date 2004.04.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/6 HIRF630 Series Pin Assignment HIRF630 / HIRF630F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This power MOSFET is designed for low voltage, high speed power switching applicati... See More ⇒
8.25. Size:94K ape
irf630.pdf
IRF630 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 200V Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 9.0A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost.... See More ⇒
8.26. Size:594K nell
irf630h.pdf
RoHS IRF630 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (9A, 200Volts) DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors. D They are designed, tested and guaranteed to withstand D level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab... See More ⇒
8.27. Size:1779K kexin
irf630s.pdf
SMD Type MOSFET N-Channel MOSFET IRF630S (KRF630S) Features VDS (V) = 200V ID = 9 A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistance d g s Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Cont... See More ⇒
8.28. Size:2683K cn vbsemi
irf630p.pdf
IRF630P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.270 at VGS =10V 10 200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch TO-220AB D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATI... See More ⇒
8.29. Size:1808K cn vbsemi
irf630s.pdf
IRF630S www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ( )VGS = 10 V 0.30 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling Simpl... See More ⇒
8.30. Size:114K inchange semiconductor
irf630.pdf
MOSFET INCHANGE IRF630 N-channel mosfet transistor Features 1 2 3 With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON) 0.4 ;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 200 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC... See More ⇒
8.31. Size:142K inchange semiconductor
irf630b.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION Drain Current ID= 9A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.4 (Max) Fast Switching Speed APPLICATIONS Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conve... See More ⇒
8.32. Size:245K inchange semiconductor
irf630a.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.4 (Max) Fast Switching Speed Low Drive Requirement APPLICATIONS This device is n-channel, enhancement mode, power MOSFET designed espec... See More ⇒
8.33. Size:244K inchange semiconductor
irf630nl.pdf
Isc N-Channel MOSFET Transistor IRF630NL FEATURES With TO-262 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
8.34. Size:232K inchange semiconductor
irf630nstrrpbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630NSTRRPBF DESCRIPTION Drain Current I =9.3A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This de... See More ⇒
8.35. Size:229K inchange semiconductor
irf630ns.pdf
Isc N-Channel MOSFET Transistor IRF630NS FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
8.36. Size:245K inchange semiconductor
irf630n.pdf
isc N-Channel MOSFET Transistor IRF630N IIRF630N FEATURES Static drain-source on-resistance RDS(on) 0.3 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
8.37. Size:108K inchange semiconductor
irf630f.pdf
MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package 1 2 3 Low on-stateand thermal resistance Fast switching VDSS=200V; RDS(ON) 0.4 ;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 200 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC... See More ⇒
Detailed specifications: PSMN9R0-30YL, PSMN9R1-30YL, PSMN9R5-100PS, PSMN9R5-100XS, PSMN9R5-30YLC, SI2302DS, SI2304DS, IRF630FP, 7N65, STB100NF03L-03, STB100NF04, STB10NK60Z, STB11N52K3, STB11NK40Z, STB11NK50Z, STB11NM60, STB11NM60FD
Keywords - IRF630M MOSFET specs
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