STB11NM60 Datasheet and Replacement
Type Designator: STB11NM60
Marking Code: B11NM60FD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 28 nC
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: D2PAK I2PAK
STB11NM60 substitution
STB11NM60 Datasheet (PDF)
stp11nm60 stp11nm60fp stb11nm60 stb11nm60-1.pdf

STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V
stb11nm60t4 stp11nm60.pdf

STB11NM60T4, STP11NM60DatasheetN-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in DPAK and TO-220 packagesFeaturesVDSSTABRDS(on) max. IDTAB Order codes Package(@ TJmax)STB11NM60T4 DPAK3650 V 0.45 11 A132 STP11NM60 TO-220D PAK TO-220 21 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceD(2
stp11nm60a stp11nm60afp stb11nm60a-1.pdf

STP11NM60ASTP11NM60AFP - STB11NM60A-1N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP11NM60A 600 V
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
Datasheet: IRF630FP , IRF630M , STB100NF03L-03 , STB100NF04 , STB10NK60Z , STB11N52K3 , STB11NK40Z , STB11NK50Z , K4145 , STB11NM60FD , STB11NM80 , STB120N4F6 , STB120N4LF6 , STB120NF10 , STB12N120K5 , STB12NK80Z , STB12NM50 .
Keywords - STB11NM60 MOSFET datasheet
STB11NM60 cross reference
STB11NM60 equivalent finder
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