STB11NM80 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB11NM80
Marking Code: B11NM80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43.6 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 750 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: D2PAK
STB11NM80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB11NM80 Datasheet (PDF)
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stb11nm60fd.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB11NM60FDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP10TN028MT | GSM9995S
History: AP10TN028MT | GSM9995S
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