STB22NS25Z MOSFET. Datasheet pdf. Equivalent
Type Designator: STB22NS25Z
Marking Code: B22NS25Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 108 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: D2PAK
STB22NS25Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB22NS25Z Datasheet (PDF)
stb22ns25z stp22ns25z.pdf
STB22NS25Z - STP22NS25ZN-channel 250V - 0.13 - 22A - TO-220 / D2PAKZener-protected MESH OVERLAY Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB22NS25Z 250V
stb22ns25zt4.pdf
STB22NS25Z - STP22NS25ZN-channel 250V - 0.13 - 22A - TO-220 / D2PAKZener-protected MESH OVERLAY Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB22NS25Z 250V
stb22nm60n stf22nm60n sti22nm60n stp22nm60n stw22nm60n.pdf
STB22NM60N, STF22NM60N, STI22NM60NSTP22NM60N, STW22NM60NN-channel 600 V, 0.2 , 16 A MDmesh II Power MOSFETin D2PAK, TO-220FP, I2PAK, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.31332STB22NM60N 650 V
stb22nm60n stf22nm60n stp22nm60n.pdf
STB22NM60N, STF22NM60N, STP22NM60NDatasheetN-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packagesFeaturesTABVDS @31 RDS(on)max. IDOrder code2D PAKTjmax.321TO-220FPTAB STB22NM60NSTF22NM60N 650 V 0.22 16 A32 STP22NM60N1TO-220 100% avalanche testedD(2, TAB) Low input capacitance and gate charg
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TP0610K-T1 | WSP16N10 | WMB240P10HG4
History: TP0610K-T1 | WSP16N10 | WMB240P10HG4
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