STB32N65M5 Specs and Replacement
Type Designator: STB32N65M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.119 Ohm
Package: D2PAK
STB32N65M5 substitution
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STB32N65M5 datasheet
stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf
STB32N65M5, STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS@ Type RDS(on) max ID TJmax 3 3 1 2 3 1 2 STB32N65M5 710 V ... See More ⇒
stb32nm50n stf32nm50n stp32nm50n stw32nm50n.pdf
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N N-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in D PAK, TO-220FP, TO-220, TO-247 packages Datasheet production data Features TAB RDS(on) Order codes VDS ID PTOT 2 max. 3 1 3 2 STB32NM50N 190 W 1 D PAK TO-220FP STF32NM50N 35 W 500 V 0.13 22 A STP32NM50N 190 W TAB STW32NM50N 190 W 100% avalanche t... See More ⇒
stb32nm50n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor STB32NM50N DESCRIPTION Drain Current I = 22A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER VALUE UNIT V Dr... See More ⇒
Detailed specifications: STB270N4F3, STB28NM50N, STB300NH02L, STB30N65M5, STB30NF10, STB30NF20, STB30NM50N, STB30NM60ND, 60N06, STB34NM60ND, STB35N65M5, STB35NF10, STB36NF06L, STB36NM60N, STB3N62K3, STB3NK60Z, STB40NF10
Keywords - STB32N65M5 MOSFET specs
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STB32N65M5 replacement
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