STB32N65M5 Datasheet and Replacement
Type Designator: STB32N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.119 Ohm
Package: D2PAK
STB32N65M5 substitution
STB32N65M5 Datasheet (PDF)
stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf

STB32N65M5, STF32N65M5, STI32N65M5STP32N65M5, STW32N65M5N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS@ Type RDS(on) max IDTJmax 33123 12STB32N65M5 710 V
stb32nm50n stf32nm50n stp32nm50n stw32nm50n.pdf

STB32NM50N, STF32NM50N,STP32NM50N, STW32NM50NN-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDS ID PTOT2max.3132STB32NM50N 190 W1DPAKTO-220FPSTF32NM50N 35 W500 V 0.13 22 ASTP32NM50N 190 WTABSTW32NM50N 190 W 100% avalanche t
stb32nm50n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STB32NM50NDESCRIPTIONDrain Current: I = 22A@ T =25D CDrain Source Voltage: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER VALUE UNITV Dr
Datasheet: STB270N4F3 , STB28NM50N , STB300NH02L , STB30N65M5 , STB30NF10 , STB30NF20 , STB30NM50N , STB30NM60ND , AO4468 , STB34NM60ND , STB35N65M5 , STB35NF10 , STB36NF06L , STB36NM60N , STB3N62K3 , STB3NK60Z , STB40NF10 .
History: NTTFS4C05N | SWH15P03
Keywords - STB32N65M5 MOSFET datasheet
STB32N65M5 cross reference
STB32N65M5 equivalent finder
STB32N65M5 lookup
STB32N65M5 substitution
STB32N65M5 replacement
History: NTTFS4C05N | SWH15P03



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