STB35N65M5 Datasheet and Replacement
Type Designator: STB35N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 84 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: D2PAK
STB35N65M5 substitution
STB35N65M5 Datasheet (PDF)
stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V
stb35n65m5.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STB35N65M5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM
stb35n60dm2.pdf

STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely
stb35nf10 stp35nf10.pdf

STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V
Datasheet: STB300NH02L , STB30N65M5 , STB30NF10 , STB30NF20 , STB30NM50N , STB30NM60ND , STB32N65M5 , STB34NM60ND , IRFP064N , STB35NF10 , STB36NF06L , STB36NM60N , STB3N62K3 , STB3NK60Z , STB40NF10 , STB40NF10L , STB40NF20 .
Keywords - STB35N65M5 MOSFET datasheet
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History: WSP4409A | SVF4N65F



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