2N6786JANTX Datasheet and Replacement
Type Designator: 2N6786JANTX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: TO205AF
2N6786JANTX Datasheet (PDF)
2n6786u.pdf
PD - 91782IRFE310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786UHEXFET TRANSISTOR JANTXV2N6786U[REF:MIL-PRF-19500/556]N - CHANNEL 400Volt, 3.6, HEXFETProduct SummaryThe leadless chip carrier (LCC) package representsPart Number BVDSS RDS(on) IDthe logical next step in the continual evolution ofIRFE310 400V 3.6 1.25Asurface mount technology. T
2n6786 irff310.pdf
PD - 90425CIRFF310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786HEXFETTRANSISTORS JANTXV2N6786THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF310 400V 3.6 1.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin
2n6786.pdf
2N6786Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34)9.40 (0.37)8.01 (0.315) in a 9.01 (0.355)Hermetically sealed TO39 4.06 (0.16)4.57 (0.18)Metal Package. 0.89 max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.N-Channel MOSFET. 5.08 (0.200)typ.VDSS = 400V 2.54ID = 1.25A 2(0.100)1 30.74 (0.029)RDS(ON) = 3.6
Datasheet: 2N6783LCC4 , 2N6783-SM , 2N6784 , 2N6784JANTX , 2N6784JANTXV , 2N6784SM , 2N6785 , 2N6786 , IRF540 , 2N6786JANTXV , 2N6787 , 2N6787LCC4 , 2N6787-SM , 2N6788 , 2N6788JANTX , 2N6788JANTXV , 2N6788SM .
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