2N6786JANTX Specs and Replacement
Type Designator: 2N6786JANTX
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: TO205AF
2N6786JANTX substitution
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2N6786JANTX datasheet
2n6786u.pdf
PD - 91782 IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U HEXFET TRANSISTOR JANTXV2N6786U [REF MIL-PRF-19500/556] N - CHANNEL 400Volt, 3.6 , HEXFET Product Summary The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE310 400V 3.6 1.25A surface mount technology. T... See More ⇒
2n6786 irff310.pdf
PD - 90425C IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786 HEXFET TRANSISTORS JANTXV2N6786 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF310 400V 3.6 1.25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin... See More ⇒
2n6786.pdf
2N6786 Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 400V 2.54 ID = 1.25A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 3.6 ... See More ⇒
Detailed specifications: 2N6783LCC4 , 2N6783-SM , 2N6784 , 2N6784JANTX , 2N6784JANTXV , 2N6784SM , 2N6785 , 2N6786 , IRF540N , 2N6786JANTXV , 2N6787 , 2N6787LCC4 , 2N6787-SM , 2N6788 , 2N6788JANTX , 2N6788JANTXV , 2N6788SM .
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