APT1004R2AN Specs and Replacement
Type Designator: APT1004R2AN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO3
APT1004R2AN substitution
- MOSFET ⓘ Cross-Reference Search
APT1004R2AN datasheet
apt1004r2bn.pdf
D TO-247 G APT1004RBN 1000V 4.4A 4.00 S APT1004R2BN 1000V 4.0A 4.20 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 1004RBN 1004R2BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25 C 4.4 4.0 Amps IDM Pulsed Drain Current 1... See More ⇒
apt1004r2kn.pdf
D TO-220 G APT1004RKN 1000V 3.6A 4.00 S APT1004R2KN 1000V 3.5A 4.20 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1004R2KN APT1004RKN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current 3.5 3.6 Amps 1 IDM Pulsed Drain Current 14.0 14.4 Amps ... See More ⇒
apt1004rgn.pdf
D TO-257 G APT1004RGN 1000V 3.3A 4.00 S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1004RGN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 3.3 Amps IDM Pulsed Drain Current 1 13.2 VGS Gate-Source Voltage 30 Volts Total Po... See More ⇒
Detailed specifications: APT1002RAN, APT1002RBN, APT1002RCN, APT1003R5AN, APT1003R5BN, APT1003R5CN, APT1003R5GN, APT10043JVR, IRF530, APT1004R2BN, APT1004R2CN, APT1004R2GN, APT1004RAN, APT1004RBN, APT1004RCN, APT1004RGN, APT1004RKN
Keywords - APT1004R2AN MOSFET specs
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