STB55NF06 Datasheet and Replacement
Type Designator: STB55NF06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 44.5 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: D2PAK
STB55NF06 Datasheet (PDF)
stb55nf06.pdf

STB55NF06 STB55NF06-1STP55NF06 STP55NF06FPN-CHANNEL 60V - 0.015 - 50A TO-220/TO-220FP/IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDTO-220FPSTP55NF06 60 V
stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf

STB55NF06 - STB55NF06-1STP55NF06 - STP55NF06FPN-channel 60V - 0.015 - 50A - D2PAK/I2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB55NF06 60V
stb55nf06 stp55nf06 stp55nf06fp.pdf

STB55NF06, STP55NF06, STP55NF06FPN-channel 60 V, 0.015 , 50 A STripFET II Power MOSFET inDPAK, TO-220 and TO-220FP packagesDatasheet production dataFeaturesTABTABOrder code VDSS RDS(on) max. IDSTB55NF06350 A3 1STP55NF06 60 V
stb55nf06.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB55NF06FEATURESWith To-263(D2PAK) packageExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current,high switch speedMotor control,audio amplifiersDC-DC&DC-AC convertersAutomotiveABSOLUTE MAXIMU
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IRFH8202
Keywords - STB55NF06 MOSFET datasheet
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STB55NF06 equivalent finder
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History: IRFH8202



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