STB60NF06L
MOSFET. Datasheet pdf. Equivalent
Type Designator: STB60NF06L
Marking Code: B60NF06L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 220
nS
Cossⓘ -
Output Capacitance: 360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
D2PAK
STB60NF06L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB60NF06L
Datasheet (PDF)
..2. Size:514K st
stb60nf06l stp60nf06l stp60nf06lfp.pdf
STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V
..3. Size:472K st
stb60nf06l.pdf
STB60NF06LSTP60NF06L STP60NF06LFPN-CHANNEL 60V - 0.012 - 60A TO-220/TO-220FP/D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06L 60 V
5.1. Size:425K st
stb60nf06.pdf
STB60NF06N-CHANNEL 60V - 0.014 - 60A D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06 60V
5.2. Size:415K st
stb60nf06-1 stb60nf06t4.pdf
STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V
5.3. Size:419K st
stb60nf06 stb60nf06-1.pdf
STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V
5.4. Size:1410K cn vbsemi
stb60nf06.pdf
STB60NF06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc
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