STB60NF10 MOSFET. Datasheet pdf. Equivalent
Type Designator: STB60NF10
Marking Code: B60NF10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 104 nC
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: D2PAK
STB60NF10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB60NF10 Datasheet (PDF)
stb60nf10 stb60nf10-1 stp60nf10.pdf
STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V
stb60nf10-1 stb60nf10t4.pdf
STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V
stb60nf06.pdf
STB60NF06N-CHANNEL 60V - 0.014 - 60A D2PAKSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06 60V
stb60nf06lt4 stb60nf06l stp60nf06l stp60nf06lfp stp60nf06lfp.pdf
STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V
stb60nf06-1 stb60nf06t4.pdf
STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V
stb60nf06l stp60nf06l stp60nf06lfp.pdf
STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V
stb60nf06 stb60nf06-1.pdf
STB60NF06STB60NF06-1N-channel 60V - 0.014 - 60A - D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06-1 60V
stb60nf06l.pdf
STB60NF06LSTP60NF06L STP60NF06LFPN-CHANNEL 60V - 0.012 - 60A TO-220/TO-220FP/D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB60NF06L 60 V
stb60nf06.pdf
STB60NF06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRF9Z24N
History: IRF9Z24N
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918