All MOSFET. STD10NF10 Datasheet

 

STD10NF10 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD10NF10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 10 A

Total Gate Charge (Qg): 15.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: DPAK

STD10NF10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD10NF10 Datasheet (PDF)

0.1. std10nf10-1 std10nf10t4 std10nf10.pdf Size:457K _st

STD10NF10
STD10NF10

STD10NF10 STD10NF10-1 N-channel 100V - 0.115Ω - 13A - DPAK - IPAK Low gate charge STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type STD10NF10 100V <0.13Ω 13A 3 3 STD10NF10-1 100V <0.13Ω 13A 2 1 1 ■ Exceptional dv/dt capability DPAK IPAK ■ Application oriented characterization Description This MOSFET series realized with STMicroelectronics unique ST

7.1. std10nf30.pdf Size:868K _st

STD10NF10
STD10NF10

STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY™ Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID STD10NF30 300 V 0.33 Ω 10 A TAB • Designed for automotive applications and 3 AEC-Q101 qualified 1 • Gate charge minimized DPAK • Very low intrinsic capacitances Applications • Switching appli

7.2. std10nf06l.pdf Size:302K _st

STD10NF10
STD10NF10

STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD10NF06L 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER 3 PACKAGE IN TAPE & REEL (SUFFIX “T4”) 1 DESCRIPTION DPAK This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been de- signed to mini

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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