All MOSFET. APT1004RGN Datasheet

 

APT1004RGN MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT1004RGN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO257

 APT1004RGN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT1004RGN Datasheet (PDF)

 ..1. Size:50K  apt
 apt1004rgn.pdf

APT1004RGN APT1004RGN

DTO-257GAPT1004RGN 1000V 3.3A 4.00STMPOWER MOS IVN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004RGN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C3.3AmpsIDM Pulsed Drain Current 113.2VGS Gate-Source Voltage30 VoltsTotal Po

 6.1. Size:76K  apt
 apt1004rbnr.pdf

APT1004RGN APT1004RGN

 6.2. Size:50K  apt
 apt1004rcn.pdf

APT1004RGN APT1004RGN

DTO-254GAPT1004RCN 1000V 3.6A 4.00STMPOWER MOS IVN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004RCN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C3.6AmpsIDM Pulsed Drain Current 114.4VGS Gate-Source Voltage30 VoltsTotal Po

 6.3. Size:51K  apt
 apt1004r2bn.pdf

APT1004RGN APT1004RGN

DTO-247GAPT1004RBN 1000V 4.4A 4.00SAPT1004R2BN 1000V 4.0A 4.20POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1004RBN 1004R2BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C4.4 4.0AmpsIDM Pulsed Drain Current 1

 6.4. Size:51K  apt
 apt1004r2kn.pdf

APT1004RGN APT1004RGN

DTO-220GAPT1004RKN 1000V 3.6A 4.00SAPT1004R2KN 1000V 3.5A 4.20POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004R2KN APT1004RKN UNITVDSS Drain-Source Voltage 1000 1000 VoltsID Continuous Drain Current3.5 3.6 Amps1IDM Pulsed Drain Current 14.0 14.4 Amps

 6.5. Size:55K  apt
 apt1004rkn.pdf

APT1004RGN APT1004RGN

DTO-220GAPT1004RKN 1000V 3.6A 4.00SAPT1004R2KN 1000V 3.5A 4.20POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1004R2KN APT1004RKN UNITVDSS Drain-Source Voltage 1000 1000 VoltsID Continuous Drain Current 3.5 3.6 Amps1IDM Pulsed Drain Current 14.0 14.4 AmpsV

Datasheet: APT10043JVR , APT1004R2AN , APT1004R2BN , APT1004R2CN , APT1004R2GN , APT1004RAN , APT1004RBN , APT1004RCN , MMIS60R580P , APT1004RKN , APT10050B2VR , APT10050JN , APT10050JVFR , APT10050JVR , APT10050LVFR , APT10050LVR , APT10057WVR .

History: HUF76429D3 | IXFH20N100P

 

 
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