All MOSFET. STD2N62K3 Datasheet

 

STD2N62K3 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD2N62K3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 620 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 2.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Maximum Drain-Source On-State Resistance (Rds): 3.6 Ohm

Package: DPAK

STD2N62K3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD2N62K3 Datasheet (PDF)

0.1. std2n62k3 stf2n62k3 stu2n62k3 stp2n62k3.pdf Size:1117K _st

STD2N62K3
STD2N62K3

STD2N62K3, STF2N62K3 STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A, DPAK, IPAK, TO-220, TO-220FP SuperMESH3™ Power MOSFET Features RDS(on) 3 Type VDSS ID Pw max 1 3 2 DPAK 1 STD2N62K3 45 W IPAK STF2N62K3 20 W 620 V < 3.6 Ω 2.2 A STP2N62K3 45 W STU2N62K3 ■ 100% avalanche tested 3 2 3 1 2 1 ■ Extremely high dv/dt capability TO-220 TO-220FP ■ Gate charge mi

9.1. std2n95k5 stf2n95k5 stp2n95k5 stu2n95k5.pdf Size:1284K _st

STD2N62K3
STD2N62K3

STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5 N-channel 950 V, 4.2 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID PTOT 3 1 STD2N95K5 45 W DPAK 3 STF2N95K5 20 W 2 1 950 V 5 Ω 2 A TAB STP2N95K5 TO-220FP 45 W STU2N95K5 TAB • TO-220 worldwide best RD

9.2. std2nk100z stp2nk100z stu2nk100z.pdf Size:453K _st

STD2N62K3
STD2N62K3

STD2NK100Z STP2NK100Z - STU2NK100Z N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET Features RDS(on) VDSS ID PTOT Type max 3 STD2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W 2 3 1 STP2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W 2 1 STU2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W IPAK TO-220 ■ Extremely high dv/dt capability 3 1 ■ 100% avalanche

 9.3. std2nk70z std2nk70z-1.pdf Size:451K _st

STD2N62K3
STD2N62K3

STD2NK70Z STD2NK70Z-1 N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH™ Power MOSFET General features Type VDSS RDS(on) ID Pw STD2NK70Z 700V 7Ω 1.6A 45W STD2NK70Z-1 700V 7Ω 1.6A 45W 3 3 2 1 ■ Extremely high dv/dt capability 1 ■ ESD improved capability DPAK IPAK ■ 100% avalanche tested ■ New high voltage benchmark ■ Gate charge minimized Des

9.4. std2na50.pdf Size:98K _st

STD2N62K3
STD2N62K3

STD2NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NA50 500 V < 4 Ω 2.2 A TYPICAL R = 3.25 Ω DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW INTRINSIC CAPACITANCES 3 2 GATE CHARGE MINIMIZED 1 1 REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE IPAK (TO-2

 9.5. stp2nk90z std2nk90z std2nk90z-1.pdf Size:598K _st

STD2N62K3
STD2N62K3

STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) 3 3 1 2 STD2NK90Z 900V <6.5Ω 2.1A 70W 1 STD2NK90Z-1 900V <6.5Ω 2.1A 70W TO-220 DPAK STP2NK90Z 900V <6.5Ω 2.1A 70W ■ Extremely high dv/dt capability ■ Improved esd capability 3 2 ■ 100% avalanche

9.6. std2nc45.pdf Size:391K _st

STD2N62K3
STD2N62K3

STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STD2NC45-1 450 V < 4.5 Ω 1.5 A 30 W STQ1NC45 450 V < 4.5 Ω 0.5 A 3.1 W 3 TYPICAL RDS(on) = 4.1 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED IPAK GATE CHARGE MINIMIZED TO-92 NEW HIGH VOLTAGE BENCHMARK DESCRIPTION The SuperMESH™ series is

9.7. stq2nk60zr-ap stp2nk60z stf2nk60z std2nk60z-1.pdf Size:542K _st

STD2N62K3
STD2N62K3

STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STF2NK60Z 600 V < 8 Ω 1.4 A 20 STQ2NK60ZR-AP 600 V < 8 Ω 0.4 A 3 W STP2NK60Z 600 V < 8 Ω 1.4 A 45 W STD2NK60Z-1 600 V < 8 Ω 1.4 A 45 W 3 2 1 TYPICAL RDS(on) = 7.2

9.8. std2nc45-1.pdf Size:256K _st

STD2N62K3
STD2N62K3

STD2NC45-1 N-channel 450 V, 4.1 Ω, 1.5 A, IPAK SuperMESH™ Power MOSFET Features ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ New high voltage benchmark 3 2 1 Application IPAK ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerM

9.9. std2nm60-1.pdf Size:482K _st

STD2N62K3
STD2N62K3

STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V < 3.2 Ω 2 A STD2NM60-1 600V < 3.2 Ω 2 A TYPICAL RDS(on) = 2.8 Ω 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 3 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE DPAK LOW GATE INPUT RESISTANCE IPAK TO-252 TO-251 TIGHT PRO

9.10. std2nc70z.pdf Size:447K _st

STD2N62K3
STD2N62K3

STD2NC70Z STD2NC70Z-1 N-CHANNEL 700V - 4.1Ω - 2.3A DPAK/IPAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STD2NC70Z 700V < 4.7Ω 2.3 A STD2NC70Z-1 700V < 4.7Ω 2.3 A TYPICAL RDS(on) = 4.1Ω 3 3 EXTREMELY HIGH dv/dt AND CAPABILITY 1 2 GATE TO - SOURCE ZENER DIODES 1 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE DPAK IPAK GATE CHARGE MINIMIZED (

9.11. std2nc50.pdf Size:442K _st

STD2N62K3
STD2N62K3

STD2NC50 STD2NC50-1 N-CHANNEL 500V - 3Ω - 2.2A DPAK/IPAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STD2NC50 500 V < 4 Ω 2.2 A STD2NC50-1 500 V < 4 Ω 2.2 A TYPICAL RDS(on) = 3 Ω 3 3 EXTREMELY HIGH dv/dt CAPABILITY 1 2 100% AVALANCHE TESTED 1 NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DPAK IPAK DESCRIPTION The PowerMESH™II is the evolution of the first ge

9.12. std2nk90zt4.pdf Size:590K _st

STD2N62K3
STD2N62K3

STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) 3 3 1 2 STD2NK90Z 900V <6.5Ω 2.1A 70W 1 STD2NK90Z-1 900V <6.5Ω 2.1A 70W TO-220 DPAK STP2NK90Z 900V <6.5Ω 2.1A 70W ■ Extremely high dv/dt capability ■ Improved esd capability 3 2 ■ 100% avalanche

9.13. std2n80k5 stf2n80k5 stp2n80k5 stu2n80k5.pdf Size:1626K _st

STD2N62K3
STD2N62K3

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD2N80K5 45 W DPAK 3 STF2N80K5 20 W 2 800 V 4.5 Ω 2 A 1 STP2N80K5 TAB 45 W TO-220FP STU2N80K5 TAB • TO-220 worldwide best RDS

9.14. std2na60.pdf Size:407K _st

STD2N62K3
STD2N62K3

STD2NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD2NA60 600 V < 4 Ω 2.3 A TYPICAL R = 3.3 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) IPAK

9.15. std2nc40.pdf Size:249K _st

STD2N62K3
STD2N62K3

STD2NC40-1 N-CHANNEL 400V - 4.7Ω - 1.5A IPAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STD2NC40-1 400V <5.5Ω 1.5A TYPICAL RDS(on) = 4.7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 NEW HIGH VOLTAGE BENCHMARK 2 GATE CHARGE MINIMIZED 1 DESCRIPTION IPAK The PowerMESH™II is the evolution of the first (SUFFIX“-1”) generation of MESH OVERLAY™. The layo

9.16. std2n80-.pdf Size:47K _st

STD2N62K3
STD2N62K3

STD2NB80-1 ® N - CHANNEL 800V - 4.6Ω - 1.9A - IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NB80-1 800V < 6.5 Ω 1.9 A TYPICAL R = 4.6 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD DPAK VERSION CONTACT 2 SALES OFFICE 1 IPAK DESCRIPTION TO-251 Using the lat

9.17. std2nc60.pdf Size:283K _st

STD2N62K3
STD2N62K3

STD2NC60 N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STD2NC60 600V < 3.6Ω 2A TYPICAL RDS(on) = 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 100% AVALANCHE TESTED 1 1 NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DPAK IPAK DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-

9.18. std2n50.pdf Size:174K _st

STD2N62K3
STD2N62K3

STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD2N50 500 V < 5.5 Ω 2 A TYPICAL R = 4.5 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) I

9.19. std2nm60.pdf Size:474K _st

STD2N62K3
STD2N62K3

STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V < 3.2 Ω 2 A STD2NM60-1 600V < 3.2 Ω 2 A TYPICAL RDS(on) = 2.8 Ω 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 3 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE DPAK LOW GATE INPUT RESISTANCE IPAK TO-252 TO-251 TIGHT PRO

9.20. std2nb25.pdf Size:274K _st

STD2N62K3
STD2N62K3

STD2NB25 ® N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAK PowerMESH MOSFET TYPE VDSS RDS(on) ID STD2NB25 250 V < 2 Ω 2 A TYPICAL R = 1.7 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD DPAK VERSION CONTACT 3 2 1 SALES OFFICE 1 DESCRIPTION IPAK DPAK Using the latest high voltage MESH OV

9.21. std2nb50.pdf Size:451K _st

STD2N62K3
STD2N62K3

STD2NB50 STD2NB50-1 N-CHANNEL 500V - 5Ω - 1A DPAK / IPAK PowerMesh™ MOSFET TYPE VDSS RDS(on) ID STD2NB50 500V < 6Ω 1 A STD2NB50-1 500V < 6Ω 1 A TYPICAL RDS(on) = 5 Ω 3 3 100% AVALANCHE TESTED 2 1 VERY LOW INTRINSIC CAPACITANCES 1 ADD SUFFIX “T4” FOR ORDERING IN TAPE & DPAK IPAK REEL DESCRIPTION Using the latest high voltage MESH OVERLAY™ INTERNAL SCHEMATIC

9.22. std2nk70z-1 std2nk70zt4.pdf Size:441K _st

STD2N62K3
STD2N62K3

STD2NK70Z STD2NK70Z-1 N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH™ Power MOSFET General features Type VDSS RDS(on) ID Pw STD2NK70Z 700V 7Ω 1.6A 45W STD2NK70Z-1 700V 7Ω 1.6A 45W 3 3 2 1 ■ Extremely high dv/dt capability 1 ■ ESD improved capability DPAK IPAK ■ 100% avalanche tested ■ New high voltage benchmark ■ Gate charge minimized Des

9.23. std2n105k5 stp2n105k5 stu2n105k5.pdf Size:1136K _st

STD2N62K3
STD2N62K3

STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB 3 Order codes VDS RDS(on) max ID PTOT 1 STD2N105K5 DPAK STP2N105K5 1050 V 8 Ω 1.5 A 60 W TAB STU2N105K5 TAB • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) 3 3 2 2 1

9.24. std2nb60.pdf Size:102K _st

STD2N62K3
STD2N62K3

STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V R I DSS DS(on) D STD2NB60 600 V < 3.6 Ω 2.6 A TYPICAL R = 3.3 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of p

9.25. std2nm60t4.pdf Size:354K _st

STD2N62K3
STD2N62K3

STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V < 3.2 Ω 2 A STD2NM60-1 600V < 3.2 Ω 2 A TYPICAL RDS(on) = 2.8 Ω 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 3 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE DPAK LOW GATE INPUT RESISTANCE IPAK TO-252 TO-251 TIGHT PRO

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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