STD2NK60Z-1 MOSFET Datasheet: N-Ch, 600V, 1.4A. Full specification with pinout and replacement list

STD2NK60Z-1 Specs and Replacement

Type Designator: STD2NK60Z-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: IPAK

STD2NK60Z-1 substitution

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STD2NK60Z-1 datasheet

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STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STF2NK60Z 600 V ... See More ⇒

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STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) 3 3 1 2 STD2NK90Z 900V ... See More ⇒

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STD2NK70Z STD2NK70Z-1 N-channel 700V - 6 - 1.6 A - DPAK/IPAK Zener protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw STD2NK70Z 700V 7 1.6A 45W STD2NK70Z-1 700V 7 1.6A 45W 3 3 2 1 Extremely high dv/dt capability 1 ESD improved capability DPAK IPAK 100% avalanche tested New high voltage benchmark Gate charge minimized Des... See More ⇒