APT10050JVFR Specs and Replacement
Type Designator: APT10050JVFR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 595 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: SOT227
APT10050JVFR substitution
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APT10050JVFR datasheet
apt10050jvr.pdf
APT10050JVR 1000V 19A 0.500 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche... See More ⇒
apt10050jn.pdf
D G APT10050JN 1000V 20.5A 0.50 S ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 10050JN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 20.5 Amps IDM, lLM ... See More ⇒
apt10050jlc.pdf
APT10050JLC 1000V 19A 0.500 TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast s... See More ⇒
Detailed specifications: APT1004R2GN, APT1004RAN, APT1004RBN, APT1004RCN, APT1004RGN, APT1004RKN, APT10050B2VR, APT10050JN, IRF1407, APT10050JVR, APT10050LVFR, APT10050LVR, APT10057WVR, APT10086BVFR, APT10086BVR, APT10086SVR, APT10088HVR
Keywords - APT10050JVFR MOSFET specs
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