STD4N62K3 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD4N62K3
Marking Code: 4N62K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 620 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 3.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 42 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: DPAK
STD4N62K3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD4N62K3 Datasheet (PDF)
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