All MOSFET. STD5N20 Datasheet

 

STD5N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD5N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 5 A

Total Gate Charge (Qg): 20 nC

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: DPAK

STD5N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD5N20 Datasheet (PDF)

0.1. std5n20l.pdf Size:283K _st

STD5N20
STD5N20

STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STD5N20L 200 V < 0.7 Ω 5 A 33 W TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 3 1 DESCRIPTION The STD5N20L utilizes the latest advanced de- sign rules of ST’s proprietary STripFET™ techno

0.2. std5n20lt4.pdf Size:268K _st

STD5N20
STD5N20

STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STD5N20L 200 V < 0.7 Ω 5 A 33 W TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 3 1 DESCRIPTION The STD5N20L utilizes the latest advanced de- sign rules of ST’s proprietary STripFET™ techno

 0.3. std5n20.pdf Size:254K _st

STD5N20
STD5N20

STD5N20 N-CHANNEL 200V - 0.6Ω - 5A DPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD5N20 200 V < 0.8 Ω 5 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 ADD SUFFIX “T4” FOR OREDERING IN TAPE & 1 REEL DPAK TO-252 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- INTERNAL S

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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