All MOSFET. STD60N3LH5 Datasheet

 

STD60N3LH5 Datasheet and Replacement


   Type Designator: STD60N3LH5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DPAK
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STD60N3LH5 Datasheet (PDF)

 ..1. Size:747K  st
 std60n3lh5 stp60n3lh5 stu60n3lh5 stu60n3lh5-s stu60n3lh5-s.pdf pdf_icon

STD60N3LH5

STD60N3LH5, STP60N3LH5STU60N3LH5, STU60N3LH5-SN-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220STripFET V Power MOSFETFeaturesOrder codes VDSS RDS(on) max ID3STD60N3LH5 30 V 0.008 48 A 213STP60N3LH5 30 V 0.0084 48 A 21IPAKTO-220STU60N3LH5 30 V 0.0084 48 ASTU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark32 Extr

 ..2. Size:386K  st
 std60n3lh5 stp60n3lh5 stu60n3lh5.pdf pdf_icon

STD60N3LH5

STD60N3LH5STP60N3LH5, STU60N3LH5N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD60N3LH5 30 V 0.008 48 A 32STP60N3LH5 30 V 0.0084 48 A1STU60N3LH5 30 V 0.0084 48 ATO-220 RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on) 3211 Very low switching gate charge

 8.1. Size:327K  st
 std60nf55la.pdf pdf_icon

STD60N3LH5

STD60NF55LAN-channel 55V - 0.012 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF55LA 55V

 8.2. Size:403K  st
 std60nf3ll std60nf3llt4.pdf pdf_icon

STD60N3LH5

STD60NF3LLN-channel 30V - 0.0075 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF3LL 60V

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History: 2SK3192 | FQD4N25TM

Keywords - STD60N3LH5 MOSFET datasheet

 STD60N3LH5 cross reference
 STD60N3LH5 equivalent finder
 STD60N3LH5 lookup
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 STD60N3LH5 replacement

 

 
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