STD65NF06 MOSFET Datasheet: N-Ch, 60V, 60A. Full specification with pinout and replacement list

STD65NF06 Specs and Replacement

Type Designator: STD65NF06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DPAK

STD65NF06 substitution

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STD65NF06 datasheet

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std65nf06 stp65nf06.pdf pdf_icon

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std65nf06.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor STD65NF06 FEATURES With TO-252( DPAK ) packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒

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STD65N3LLH5 STU65N3LLH5 N-channel 30 V, 0.0061 , 65 A, DPAK, IPAK STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD65N3LLH5 30 V 0.0069 65 A STU65N3LLH5 30 V 0.0073 65 A 3 RDS(on) * Qg industry benchmark 3 2 1 1 Extremely low on-resistance RDS(on) Very low switching gate charge DPAK IPAK High avalanche ruggedness Low gate drive pow... See More ⇒