All MOSFET. STD90N4F3 Datasheet

 

STD90N4F3 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD90N4F3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 40 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: DPAK

STD90N4F3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD90N4F3 Datasheet (PDF)

0.1. std90n4f3 sti90n4f3 stp90n4f3 stu90n4f3.pdf Size:802K _st

STD90N4F3
STD90N4F3

STD90N4F3, STI90N4F3 STP90N4F3, STU90N4F3 N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET™ III Power MOSFET Features RDS(on) 3 Type VDSS ID Pw 3 max 1 2 1 STD90N4F3 40 V < 5.8mΩ 80 A 110 W DPAK IPAK STI90N4F3 40 V < 6.2 mΩ 80 A 110 W STP90N4F3 40 V < 6.2 mΩ 80 A 110 W STU90N4F3 40 V < 6.2 mΩ 80 A 110 W ■ Standard threshold drive 3 3 2 2 1 1

8.1. std90n02l-1 std90n02l.pdf Size:383K _st

STD90N4F3
STD90N4F3

STD90N02L STD90N02L-1 N-channel 25V - 0.0052Ω - 60A - DPAK - IPAK STripFET™ III Power MOSFET Features RDS(on) Type VDSS ID Max STD90N02L 25V <0.006Ω 60A STD90N02L-1 25V <0.006Ω 60A 3 3 2 ■ RDS(ON) * Qg industry’s benchmark 1 1 ■ Conduction losses reduced DPAK IPAK ■ Switching losses reduced ■ Low threshold device ■ In compliance with the 2002/95/ec europ

8.2. std90nh02l.pdf Size:516K _st

STD90N4F3
STD90N4F3

STD90NH02L STD90NH02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD90NH02L-1 24V <0.006Ω 60A(1) STD90NH02L 24V <0.006Ω 60A(1) 3 3 1. Value limited by wire bonding 2 1 1 ■ RDS(ON) * Qg industry’s benchmark DPAK ■ Conduction losses reduced IPAK ■ Switching losses reduced ■ Low threshold device

 8.3. std90nh02lt4.pdf Size:511K _st

STD90N4F3
STD90N4F3

STD90NH02L STD90NH02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD90NH02L-1 24V <0.006Ω 60A(1) STD90NH02L 24V <0.006Ω 60A(1) 3 3 1. Value limited by wire bonding 2 1 1 ■ RDS(ON) * Qg industry’s benchmark DPAK ■ Conduction losses reduced IPAK ■ Switching losses reduced ■ Low threshold device

8.4. std90n03l std90n03l-1.pdf Size:317K _st

STD90N4F3
STD90N4F3

STD90N03L STD90N03L-1 N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STD90N03L 30V 0.0057Ω 80A (1) STD90N03L-1 30V 0.0057Ω 80A (1) 3 3 2 1 1. Pulse width limited by safe operating area 1 ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced IPAK DPAK ■ Switching losses reduced ■ Low threshold

 8.5. std90n02l std90n02l-1.pdf Size:387K _st

STD90N4F3
STD90N4F3

STD90N02L STD90N02L-1 N-channel 25V - 0.0052Ω - 60A - DPAK - IPAK STripFET™ III Power MOSFET Features RDS(on) Type VDSS ID Max STD90N02L 25V <0.006Ω 60A STD90N02L-1 25V <0.006Ω 60A 3 3 2 ■ RDS(ON) * Qg industry’s benchmark 1 1 ■ Conduction losses reduced DPAK IPAK ■ Switching losses reduced ■ Low threshold device ■ In compliance with the 2002/95/ec europ

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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