STF10N65K3 Datasheet and Replacement

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

STF10N60M2, STFI10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order codes VDS @ TJmax max IDSTF10N60M2650 V 0.6 7.5 ASTFI10N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous generation1221 3 Low gate input resistance2T

STF10N62K3, STFI10N62K3,STI10N62K3, STP10N62K3N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 packagesDatasheet - production dataFeaturesRDS(on) Type VDSS max ID Pw32STF10N62K31128.4 A(1) 30 W3TO-220FPSTFI10N62K3IPAKFP620 V

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5N-channel 950 V, 0.65 typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247Datasheet - production dataTAB Features3Order codes VDS RDS(on) max ID PTOT123D PAK STB10N95K5 130 W21STF10N95K5 30 WTO-220FP950 V 0.8 8 ASTP10N95K5TAB130 WSTW10N95K5 Worldwide best FOM

STF10N80K5, STFU10N80K5 N-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF10N80K5 800 V 0.600 9 A 30 W STFU10N80K5 Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra-low gate charge

STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. jmax.STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance

STP10NK50ZSTF10NK50ZN-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FPZener-Protected SuperMESHMOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP10NK50Z 500 V

STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TABR DS(on)Order codes V I P DS D TOTmax. STF10N105K5 30 W 33 22 1STP10N105K5 1050 V 1.3 6 A 130 W 1TO-220STW10N105K5 130 W TO-220FP Industrys lowest RDS(on) 3 In

STD10NM50NSTF10NM50N, STP10NM50NN-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max33221STD10NM50N1TO-220FP TO-220STF10NM50N 550 V

STF10N80K5N-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOTSTF10N80K5 800 V 0.600 9 A 30 W Industrys best RDS(on)32 Industrys best figure of merit (FoM)1 Ultra-low gate chargeTO-220FP 100% avalanche tested Zener-protectedApplicationsF

isc N-Channel MOSFET Transistor STF10NM60NDFEATURES Drain-source on-resistance:RDS(on) 0.6 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONReliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF10NM65NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25