APT10M19BVR MOSFET. Datasheet pdf. Equivalent
Type Designator: APT10M19BVR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 1900 pF
Maximum Drain-Source On-State Resistance (Rds): 0.019 Ohm
Package: TO247
APT10M19BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT10M19BVR Datasheet (PDF)
1.1. apt10m19bvr.pdf 
Size:67K _apt
APT10M19BVR 100V 75A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower
1.2. apt10m19bvfr.pdf Size:74K _apt
APT10M19BVFR 100V 75A 0.019Ω POWER MOS V® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avala
1.3. apt10m19bvfrg apt10m19svfr apt10m19svfrg.pdf Size:117K _apt
APT10M19BVFR APT10M19SVFR Ω 100V 75A 0.019Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SV
1.4. apt10m19bvrg.pdf Size:47K _apt
APT10M19BVR 100V 75A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower
Datasheet: APT10086BVR , APT10086SVR , APT10088HVR , APT10M07JVR , APT10M11B2VR , APT10M11JVR , APT10M11LVR , APT10M19BVFR , 2SK2611 , APT10M19SVR , APT10M25BVFR , APT10M25BVR , APT10M25SVR , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR .
