All MOSFET. APT10M19BVR Datasheet

 

APT10M19BVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT10M19BVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 370 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 1900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.019 Ohm

Package: TO247

APT10M19BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10M19BVR Datasheet (PDF)

1.1. apt10m19bvr.pdf Size:67K _apt

APT10M19BVR
APT10M19BVR

APT10M19BVR 100V 75A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

1.2. apt10m19bvfr.pdf Size:74K _apt

APT10M19BVR
APT10M19BVR

APT10M19BVFR 100V 75A 0.019Ω POWER MOS V® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avala

 1.3. apt10m19bvfrg apt10m19svfr apt10m19svfrg.pdf Size:117K _apt

APT10M19BVR
APT10M19BVR

APT10M19BVFR APT10M19SVFR Ω 100V 75A 0.019Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SV

1.4. apt10m19bvrg.pdf Size:47K _apt

APT10M19BVR
APT10M19BVR

APT10M19BVR 100V 75A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

Datasheet: APT10086BVR , APT10086SVR , APT10088HVR , APT10M07JVR , APT10M11B2VR , APT10M11JVR , APT10M11LVR , APT10M19BVFR , 2SK2611 , APT10M19SVR , APT10M25BVFR , APT10M25BVR , APT10M25SVR , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR .

 

 
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