All MOSFET. STF24NM60N Datasheet

 

STF24NM60N MOSFET. Datasheet pdf. Equivalent


   Type Designator: STF24NM60N
   Marking Code: 24NM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 16.5 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220FP

 STF24NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STF24NM60N Datasheet (PDF)

 ..1. Size:890K  st
stf24nm60n stp24nm60n stw24nm60n.pdf

STF24NM60N
STF24NM60N

STF24NM60NSTP24NM60N, STW24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETTO-220FP, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STF24NM60N 650 V

 ..2. Size:1094K  st
stf24nm60n sti24nm60n stp24nm60n stw24nm60n.pdf

STF24NM60N
STF24NM60N

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60NN-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packagesDatasheet - production dataTAB Features Order codes VDS @Tjmax RDS(on) max. IDSTF24NM60N3 322 11STI24NM60NI2PAKTO-220FP650 V 0.19 17 ASTP24NM60NTABSTW24NM60N 100% avalanche tested332 L

 6.1. Size:556K  st
stb24nm65n sti24nm65n stf24nm65n stp24nm65n stw24nm65n.pdf

STF24NM60N
STF24NM60N

STW24NM65N-STI24NM65N-STF24NM65NSTB24NM65N - STP24NM65NN-channel 650 V - 0.16 - 19 A - TO-220 - TO-220FP - D2PAKI2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) max ID(@TJmax)323121STB24NM65N 710 V

 8.1. Size:1178K  st
stb24n65m2 stf24n65m2 stp24n65m2.pdf

STF24NM60N
STF24NM60N

STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I DS DS(on) DSTB24N65M2 STF24N65M2 650 V 0.23 16 A STP24N65M2 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Ze

 8.2. Size:1364K  st
stf24n60m2 stfi24n60m2 stfw24n60m2.pdf

STF24NM60N
STF24NM60N

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area

 8.3. Size:251K  st
stf24nf12.pdf

STF24NM60N
STF24NM60N

STF24NF12N-channel 120V - 0.070 - 24A TO-220FPLow gate charge STripFET II MOSFETGeneral featuresType VDSS RDS(on) IDSTF24NF12 120V

 8.4. Size:815K  st
stf24n60dm2.pdf

STF24NM60N
STF24NM60N

STF24N60DM2N-channel 600 V, 0.175 typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF24N60DM2 650 V 0.20 18 A Fast-recovery body diode Extremely low gate charge and input 321 capacitanceTO-220FP Low on-resistance 100% avalanche tested Extremely high dv/dt rugg

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT6029SLL

 

 
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