All MOSFET. APT1201R5BVR Datasheet

 

APT1201R5BVR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT1201R5BVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 190 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO247

 APT1201R5BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT1201R5BVR Datasheet (PDF)

 ..1. Size:63K  apt
apt1201r5bvr.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R5BVR1200V 10A 1.500POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 3.1. Size:144K  apt
apt1201r5bvfrg apt1201r5svfrg.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi

 3.2. Size:137K  apt
apt1201r5bvfr.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi

 6.1. Size:65K  apt
apt1201r2sll.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R2BLLAPT1201R2SLL1200V 12A 1.200WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switc

 6.2. Size:62K  apt
apt1201r6bvr.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 6.3. Size:69K  apt
apt1201r4bll.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R4BLLAPT1201R4SLL1200V 9A 1.400WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switch

 6.4. Size:113K  apt
apt1201r6bvfr.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 6.5. Size:114K  apt
apt1201r6bvfrg apt1201r6svfrg.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 6.6. Size:254K  apt
apt1201r4bfll apt1201r4sfll.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R4BFLL(G)APT1201R4SFLL(G)1200V 9A 1.50 R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesal

 6.7. Size:62K  apt
apt1201r6.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 6.8. Size:159K  apt
apt1201r2bfllg apt1201r2sfllg.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R2BFLL(G)APT1201R2SFLL(G)1200V 12A 1.25 R BFLL POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching loss

 6.9. Size:69K  apt
apt1201r2bll.pdf

APT1201R5BVR
APT1201R5BVR

APT1201R2BLLAPT1201R2SLL1200V 12A 1.200WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switc

Datasheet: APT10M11JVR , APT10M11LVR , APT10M19BVFR , APT10M19BVR , APT10M19SVR , APT10M25BVFR , APT10M25BVR , APT10M25SVR , IRF1405 , APT1201R6BVR , APT12040JVR , APT12080JVR , APT12080LVR , APT20M11JVFR , APT20M11JVR , APT20M13PVR , APT20M19JVR .

 

 
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