STI23NM60ND Datasheet and Replacement
Type Designator: STI23NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 19.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: I2PAK
STI23NM60ND substitution
STI23NM60ND Datasheet (PDF)
stb23nm60nd sti23nm60nd stf23nm60nd stp23nm60nd stw23nm60nd.pdf

STx23NM60NDN-channel 600 V, 0.150 , 19.5 A, FDmesh II Power MOSFET(with fast diode) DPAK, IPAK, TO-220, TO-220FP, TO-247FeaturesVDSS RDS(on) Type ID3max.3(@Tjmax)1 21STx23NM60ND 650 V
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf

STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf

STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited
Datasheet: STI10N62K3 , STI12N65M5 , STI13NM60N , STI16N65M5 , STI18NM60N , STI200N6F3 , STI21N65M5 , STI22NM60N , IRF4905 , STI24NM60N , STI24NM65N , STI26NM60N , STI270N4F3 , STI300N4F6 , STI30N65M5 , STI32N65M5 , STI35N65M5 .
History: IPN80R900P7
Keywords - STI23NM60ND MOSFET datasheet
STI23NM60ND cross reference
STI23NM60ND equivalent finder
STI23NM60ND lookup
STI23NM60ND substitution
STI23NM60ND replacement
History: IPN80R900P7



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