APT20M11JVFR Specs and Replacement

Type Designator: APT20M11JVFR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 700 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 175 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 4100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SOT227

APT20M11JVFR substitution

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APT20M11JVFR datasheet

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 apt20m11jvfr.pdf pdf_icon

APT20M11JVFR

APT20M11JVFR 200V 175A 0.011 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ISOTOP Fast Recovery Body Diode 100% Avalanche... See More ⇒

 4.1. Size:74K  apt
 apt20m11jvr.pdf pdf_icon

APT20M11JVFR

APT20M11JVR 200V 175A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche... See More ⇒

 5.1. Size:166K  apt
 apt20m11jll.pdf pdf_icon

APT20M11JVFR

APT20M11JLL 200V 176A 0.011 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" along with exceptionall... See More ⇒

 5.2. Size:167K  apt
 apt20m11jfll.pdf pdf_icon

APT20M11JVFR

APT20M11JFLL 200V 176A 0.011 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switchin... See More ⇒

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Detailed specifications: APT10M25BVFR, APT10M25BVR, APT10M25SVR, APT1201R5BVR, APT1201R6BVR, APT12040JVR, APT12080JVR, APT12080LVR, IRF830, APT20M11JVR, APT20M13PVR, APT20M19JVR, APT20M22B2VFR, APT20M22B2VR, APT20M22JVFR, APT20M22JVR, APT20M22LVFR

Keywords - APT20M11JVFR MOSFET specs

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