STL160N3LLH6
MOSFET. Datasheet pdf. Equivalent
Type Designator: STL160N3LLH6
Marking Code: 160N3LLH6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min)
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 61.5
nC
trⓘ - Rise Time: 32
nS
Cossⓘ -
Output Capacitance: 1230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013
Ohm
Package: POWERFLAT5X6
STL160N3LLH6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL160N3LLH6
Datasheet (PDF)
..1. Size:795K st
stl160n3llh6.pdf 
STL160N3LLH6N-channel 30 V, 0.0011 , 35 A PowerFLAT (5x6)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL160N3LLH6 30 V 0.0013 35 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 5x6 ) Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness
7.1. Size:1015K st
stl160ns3llh7.pdf
STL160NS3LLH7N-channel 30 V, 0.0016 typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6Datasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL160NS3LLH7 30 V 0.0021 160 A Very low on-resistance12 Very low Qg34 High avalanche ruggednessPowerFLAT5x6 Embedded Schottky diodeApplications Switchi
9.1. Size:942K st
stl16n65m2.pdf
STL16N65M2N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL16N65M2 710 V 0.395 7.5 A Extremely low gate charge1 Excellent output capacitance (Coss) profile 234 100% avalanche tested Zener-protectedPowerFLAT 5x6 HVApplications
9.2. Size:467K st
stl16n60m2.pdf
STL16N60M2 N-channel 600 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTL16N60M2 650 V 0.355 8 A Extremely low gate charge 1 Excellent output capacitance (COSS) profile 2 100% avalanche tested 34 Zener-protected Applications PowerFL
9.3. Size:923K st
stl16n65m5.pdf
STL16N65M5N-channel 650 V, 0.270 , 12 A PowerFLAT 8x8 HVMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL16N65M5 710 V
9.4. Size:846K st
stl16n1vh5.pdf
STL16N1VH5N-channel 12 V, 0.0022 , 16 A, PowerFLAT (3.3 x 3.3)STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL16N1VH5 12 V 0.003 16 A (1)1. The value is rated according Rthj-pcb Improved die-to-footprint ratio Very low profile package (1mm max)PowerFLAT(3.3x3.3) Very low thermal resistance Very low gate charge Very low o
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