All MOSFET. STL16N1VH5 Datasheet

 

STL16N1VH5 Datasheet and Replacement


   Type Designator: STL16N1VH5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 31.6 nS
   Cossⓘ - Output Capacitance: 949 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: POWERFLAT3.3X3.3
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STL16N1VH5 Datasheet (PDF)

 ..1. Size:846K  st
stl16n1vh5.pdf pdf_icon

STL16N1VH5

STL16N1VH5N-channel 12 V, 0.0022 , 16 A, PowerFLAT (3.3 x 3.3)STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL16N1VH5 12 V 0.003 16 A (1)1. The value is rated according Rthj-pcb Improved die-to-footprint ratio Very low profile package (1mm max)PowerFLAT(3.3x3.3) Very low thermal resistance Very low gate charge Very low o

 8.1. Size:942K  st
stl16n65m2.pdf pdf_icon

STL16N1VH5

STL16N65M2N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL16N65M2 710 V 0.395 7.5 A Extremely low gate charge1 Excellent output capacitance (Coss) profile 234 100% avalanche tested Zener-protectedPowerFLAT 5x6 HVApplications

 8.2. Size:467K  st
stl16n60m2.pdf pdf_icon

STL16N1VH5

STL16N60M2 N-channel 600 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTL16N60M2 650 V 0.355 8 A Extremely low gate charge 1 Excellent output capacitance (COSS) profile 2 100% avalanche tested 34 Zener-protected Applications PowerFL

 8.3. Size:923K  st
stl16n65m5.pdf pdf_icon

STL16N1VH5

STL16N65M5N-channel 650 V, 0.270 , 12 A PowerFLAT 8x8 HVMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL16N65M5 710 V

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History: 20N03L-TO252 | 2N6762JTXV

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