STL18N55M5
MOSFET. Datasheet pdf. Equivalent
Type Designator: STL18N55M5
Marking Code: 18N55M5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 2.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 31
nC
trⓘ - Rise Time: 9.5
nS
Cossⓘ -
Output Capacitance: 38
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27
Ohm
Package: POWERFLAT8X8HV
STL18N55M5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL18N55M5
Datasheet (PDF)
..1. Size:894K st
stl18n55m5.pdf
STL18N55M5N-channel 550 V, 0.205 , 13 A PowerFLAT 8x8 HVMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Type IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL18N55M5 600 V
8.1. Size:938K st
stl18nm60n.pdf
STL18NM60NN-channel 600 V, 0.26 typ., 12 A MDmesh II Power MOSFET ina PowerFLAT 8x8 HV packageDatasheet - production dataFeatures Order code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2) 12 A STL18NM60N 650 V 0.310 G(1) (1)D(3)1. The value is rated according to Rthj-case 100% avalanche tested Low input capacitance and gate chargePowerFLAT 8
8.2. Size:704K st
stl18n65m2.pdf
STL18N65M2N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesVDS @ Order codesTJmax RDS(on) max IDSTL18N65M2 715 V 0.365 8 A Extremely low gate charge123 Excellent output capacitance (Coss) profile4 100% avalanche testedPowerFLAT 5x6 HV Zener-protectedApplicatio
8.3. Size:1535K st
stl18n65m5.pdf
STL18N65M5N-channel 650 V, 0.215 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on)max. IDSTL18N65M5 710 V 0.240 15 A(1)1. The value is rated according to Rthj-case and limited by package.1 Outstanding RDS(on)*area23 Extremely large avalanche performance4 Gate charge minimize
8.4. Size:940K st
stl18n60m2.pdf
STL18N60M2N-channel 600 V, 0.278 typ., 9 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesVDS @ Order codeTJmax RDS(on) max IDSTL18N60M2 650 V 0.308 9 A Extremely low gate charge123 Lower RDS(on) x area vs previous generation4 Low gate input resistancePowerFLAT 5x6 HV 100% avalanche
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