All MOSFET. APT20M13PVR Datasheet

 

APT20M13PVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT20M13PVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 625 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 146 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 4100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: PPACK

APT20M13PVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT20M13PVR Datasheet (PDF)

1.1. apt20m13pvr.pdf Size:36K _apt

APT20M13PVR
APT20M13PVR

APT20M13PVR 200V 146A 0.013Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

3.1. apt20m16b2fllg apt20m16lfllg.pdf Size:162K _update_mosfet

APT20M13PVR
APT20M13PVR

APT20M16B2FLL APT20M16LFLL Ω 200V 100A 0.016Ω Ω Ω Ω R B2FLL POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses

3.2. apt20m16b2llg apt20m16lllg.pdf Size:171K _update_mosfet

APT20M13PVR
APT20M13PVR

APT20M16B2LL APT20M16LLL Ω 200V 100A 0.016Ω Ω Ω Ω R B2LL POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses LL

 3.3. apt20m120jcu3.pdf Size:107K _update_mosfet

APT20M13PVR
APT20M13PVR

APT20M120JCU3 VDSS = 1200V ISOTOP® Buck chopper RDSon = 560mΩ typ @ Tj = 25°C MOSFET + SiC chopper diode ID = 20A @ Tc = 25°C Power module Application D • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS 8™ MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated • SiC Schott

3.4. apt20m18b2vrg apt20m18lvrg.pdf Size:159K _update_mosfet

APT20M13PVR
APT20M13PVR

APT20M18B2VR A20M18LVR Ω 200V 100A 0.018Ω Ω Ω Ω B2VR POWER MOS V® MOSFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LV

 3.5. apt20m11jll.pdf Size:166K _update_mosfet

APT20M13PVR
APT20M13PVR

APT20M11JLL Ω 200V 176A 0.011Ω Ω Ω Ω R POWER MOS 7 MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses "UL Recognized" along with exceptionall

3.6. apt20m11jfll.pdf Size:167K _update_mosfet

APT20M13PVR
APT20M13PVR

APT20M11JFLL Ω 200V 176A 0.011Ω Ω Ω Ω R POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switchin

3.7. apt20m18b2vfrg apt20m18lvfrg.pdf Size:152K _update_mosfet

APT20M13PVR
APT20M13PVR

APT20M18B2VFR A20M18LVFR Ω 200V 100A 0.018Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

3.8. apt20m120jcu2.pdf Size:106K _update_mosfet

APT20M13PVR
APT20M13PVR

APT20M120JCU2 VDSS = 1200V ISOTOP® Boost chopper RDSon = 560mΩ typ @ Tj = 25°C MOSFET + SiC chopper diode ID = 20A @ Tc = 25°C Power module Application K • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction D • Brake switch Features • Power MOS 8™ MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

3.9. apt20m19jvr.pdf Size:74K _apt

APT20M13PVR
APT20M13PVR

APT20M19JVR 200V 112A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

3.10. apt20m10jll.pdf Size:69K _apt

APT20M13PVR
APT20M13PVR

APT20M10JLL 200V 185A 0.010W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

3.11. apt20m18b2vr.pdf Size:38K _apt

APT20M13PVR
APT20M13PVR

APT20M18B2VR APT20M18LVR 200V 100A 0.018W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificati

3.12. apt20m16b2ll.pdf Size:70K _apt

APT20M13PVR
APT20M13PVR

APT20M16B2LL APT20M16LLL 200V 100A 0.016W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

3.13. apt20m11jvr.pdf Size:74K _apt

APT20M13PVR
APT20M13PVR

APT20M11JVR 200V 175A 0.011Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

3.14. apt20m10jfll.pdf Size:63K _apt

APT20M13PVR
APT20M13PVR

APT20M10JFLL 200V 185A 0.010W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

3.15. apt20m10jll 1.pdf Size:61K _apt

APT20M13PVR
APT20M13PVR

APT20M10JLL 200V 185A 0.010 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

3.16. apt20m11jvfr.pdf Size:74K _apt

APT20M13PVR
APT20M13PVR

APT20M11JVFR 200V 175A 0.011Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. ISOTOP® • Fast Recovery Body Diode • 100% Avalanche

3.17. apt20m16b2fll.pdf Size:71K _apt

APT20M13PVR
APT20M13PVR

APT20M16B2FLL APT20M16LFLL 200V 100A 0.016W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti

3.18. apt20m18b2vfr.pdf Size:39K _apt

APT20M13PVR
APT20M13PVR

APT20M18B2VFR APT20M18LVFR 200V 100A 0.018W B2VFR POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVFR • Identical

Datasheet: APT10M25SVR , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR , APT12080LVR , APT20M11JVFR , APT20M11JVR , 2N5485 , APT20M19JVR , APT20M22B2VFR , APT20M22B2VR , APT20M22JVFR , APT20M22JVR , APT20M22LVFR , APT20M22LVR , APT20M26WVR .

 

 
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